UNISONIC TECHNOLOGIES CO., LTD
MPSH10
RF TRANSISTOR
DESCRIPTION
The UTC
MPSH10
is desinged for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
NPN EPITAXIAL SILICON TRANSISTOR
1
TO-92
ORDERING INFORMATION
Ordering Number
Normal
Lead Free
Halogen Free
MPSH10-x-T92-B
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10-x-T92-K
MPSH10L-x-T92-K
MPSH10G-x-T92-K
Note: Pin assignment: E: EMITTER, C: COLLECTOR, B: BASE
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
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MPSH10
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C,unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
J
T
STG
RATINGS
30
25
3
350
50
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
Ic=100μA
Collector-Emitter Breakdown Voltage BV
CEO
Ic=1mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10μA
Collector Cut-Off Current
I
CBO
V
CB
=25V
Emitter Cut-Off Current
I
EBO
V
EB
=2V
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=4mA, I
B
=400μA
Base-Emitter On Voltage
V
BE(ON)
V
CE
=10V, I
C
=4mA
DC Current Gain
h
FE
V
CE
=10V, I
C
=4mA
Output Capacitace
C
OB
V
CB
=10V, f=1MHZ
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=4mA, f=100MHZ
MIN
30
25
TYP
MAX
UNIT
V
V
V
nA
nA
mV
mV
pF
MHZ
3
100
100
500
950
60
0.7
650
CLASSIFICATION OF h
FE
RANK
RANGE
A
60-100
B
90-130
C
120 -200
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MPSH10
TEST CIRCUIT
NPN EPITAXIAL SILICON TRANSISTOR
2.0kΩ
10kΩ
Vcc=12V
1000pF
1000pF
0.8-10pF
100pF
L2
T1
2.0pF
0.8-10pF
L1-L3 turns No.16 wire,1/2 inch Lx 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No.14 wire,1 inch Lx inch ID
T1 - Pri.1 turn No.16 wire
Sec.1 turn No.18 wire
Input
50kΩ
1000pF
L1
TUM
5.0-18pF
1000pF
680Ω
1000pF
V
BB
Figure 1. Neutralized 200 MHz PG and NF Circuit
50pF
(Note 2)
175pF
500mHz Output
into 50Ω
Note 1. 2 turns No.16 AWG wire,3/8 inch OD,11/4 inch long
2. 9 turns No,22 AWG wire,3/16 inch OD,1/2 inch long
RFC
1000pF
(Note 1)
1000pF
RFC
-Vee
Vcc
Figure 2. 500 MHz Oscillator Circuit
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MPSH10
TEST CIRCUIT(Cont.)
2.0kΩ
10kΩ
NPN EPITAXIAL SILICON TRANSISTOR
Vcc=12V
1000pF
1000pF
0.8-10pF
100pF
L2
T1
2.0pF
0.8-10pF
L1-L3 turns No.16 wire,1/2 inch Lx 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No.14 wire,1 inch Lx inch ID
T1 - Pri.1 turn No.16 wire
Sec.1 turn No.18 wire
Input
50kΩ
1000pF
L1
TUM
5.0-18pF
1000pF
680Ω
1000pF
V
BB
Figure 1. Neutralized 200 MHz PG and NF Circuit
50pF
(Note 2)
175pF
500mHz Output
into 50Ω
Note 1. 2 turns No.16 AWG wire,3/8 inch OD,11/4 inch long
2. 9 turns No,22 AWG wire,3/16 inch OD,1/2 inch long
RFC
1000pF
(Note 1)
1000pF
RFC
-Vee
Vcc
Figure 2. 500 MHz Oscillator Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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