首页 > 器件类别 > 半导体 > 分立半导体

MR751

6 A, 100 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:SUNMATE

厂商官网:http://www.sunmate.tw/

下载文档
MR751 在线购买

供应商:

器件:MR751

价格:-

最低购买:-

库存:点击查看

点击购买

文档预览
MR750-MR760
6.0A Axial Leaded Silicon Rectifier
Features
·
·
·
·
·
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
·
Case: R-6, Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: Cathode Band
·
Weight: 2.1 grams (approx.)
·
Mounting Position: Any
·
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
C
R-6
Dim
Min
Max
25.4
A
8.60
9.10
B
1.20
1.30
C
8.60
9.10
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 6.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
MR750
MR751
MR752
MR754
MR756
MR758
MR760
Unit
50
35
100
70
200
140
400
280
6.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
400
1.0
5.0
1.0
150
20
-50 to +150
-50 to +150
A
V
µA
mA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1of2
8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
7
I
O
, AVERAGE RECTIFIED CURRENT (A)
6
5
4
3
2
1
0
0
25
50
75
100
125
150 175
200
10
1.0
T
j
= 25ºC
Pulse Width = 300
µ
s
2% Duty Cycle
0.1
0
0.2
0.6
1.0
1.4
1.8
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2, Typical Forward Characteristics
500
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
1000
T
j
= 25°C
f = 1MHz
300
C
j
, CAPACITANCE (pF)
8.3ms Single Half Sine-Wave
JEDEC Method
400
100
200
100
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
100
10
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
2of2
查看更多>
参数对比
与MR751相近的元器件有:MR752、MR754、MR756、MR760、MR750、MR758。描述及对比如下:
型号 MR751 MR752 MR754 MR756 MR760 MR750 MR758
描述 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消