Freescale Semiconductor, Inc.
this document by MRF1047T1/D
Order
NPN Silicon
Low Noise Transistor
The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz f
τ
discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at V
CE
= 3.0 V and
I
C
= 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high f
τ
,
low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
RF NPN
SILICON TRANSISTOR
f
τ
= 12 GHz
NF
min
= 1.0 dB
I
CMAX
= 45 mA
V
CEO
= 5.0 V
SEMICONDUCTOR
TECHNICAL DATA
Freescale Semiconductor, Inc...
LIFETIME BUY
•
•
•
•
•
Low Noise Figure, NF
min
= 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
High Current Gain–Bandwidth Product, f
τ
= 12 GHz, 3.0 V @ 15 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
Output Third Order Intercept, OIP
3
= 26 dBm @ 1.0 GHz 3.0 V
and 15 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
Pin 1. Base
2. Emitter
3. Collector
3
1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous [Note 3]
Power Dissipation @ T
C
= 75°C
Derate Linearly above T
C
= 75°C at
Storage Temperature Range
Maximum Junction Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D(max)
T
stg
T
J(max)
Value
5.0
12
2.5
45
0.172
2.3
–55 to 150
150
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
°C
°C
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
ORDERING INFORMATION
Device
MRF1047T1
Marking
WB
Package
SC–70
Tape & Reel*
NOTES:
1. Meets Human Body Model (HBM)
≤300
V and Machine Model (MM)
≤75
V.
2. ESD data available upon request.
3. For MTBF >10 years.
*3,000 Units per 8 mm, 7 inch reel.
THERMAL CHARACTERISTIC
Characteristics
Thermal Resistance, Junction–to–Case
NOTE:
Symbol
R
θJC
Max
435
Unit
°C/W
To calculate the junction temperature use T
J
= (P
D
x R
θJC
) + T
C
. The case
temperature measured on collector lead adjacent to the package body.
©
Motorola, Inc. 2001
Rev 3
MOTOROLA RF PRODUCTS DEVICE DATA
Information On This Product,
For More
1
Go to: www.freescale.com
LAST ORDER: 03AUG01
2
LAST SHIP: 26MAR02
MRF1047T1
Freescale Semiconductor, Inc.
MRF1047T1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise noted)
OFF CHARACTERISTICS
[Note 1]
Collector–Emitter Breakdown Voltage (I
C
= 0.1 mA, I
B
= 0)
Collector–Base Breakdown Voltage (I
C
= 0.1 mA, I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 0.1 mA, I
C
= 0)
Collector Cutoff Current (V
CB
=1.0 V, I
E
= 0)
Emitter Cutoff Current (V
EB
= 1.0 V, I
C
= 0)
V(
BR)CEO
V
(BR)CBO
V
(BR)CBO
I
CBO
I
EBO
5.0
12
2.5
–
–
–
–
–
–
–
–
–
–
Vdc
Vdc
Vdc
µA
µA
0.2
0.1
ON CHARACTERISTICS
[Note 1]
DC Current Gain (V
CE
= 3.0 V, I
C
= 3.0 mA)
h
FE
100
–
300
–
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (V
CB
= 1.0 Vdc, I
E
= 0, f = 1.0 MHz)
Current–Gain Bandwidth Product (V
CE
= 3.0 Vdc, I
C
= 15 mA, f = 1.0 GHz)
C
cb
f
τ
|S
21
|
2
–
–
MSG, MAG
–
–
NF
min
–
–
G
NF
–
–
P
1dB
OIP
3
–
–
10
13
0.5
22
–
–
–
–
dBm
dBm
1.2
1.0
–
–
dB
11
16
–
–
dB
8.0
13
–
–
dB
–
–
0.4
12
–
–
pF
GHz
Freescale Semiconductor, Inc...
PERFORMANCE CHARACTERISTICS
Insertion Gain
V
CE
= 1.0 V, I
C
= 1.0 mA, f = 1.0 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.0 GHz
dB
LIFETIME BUY
Maximum Stable Gain and/or Maximum Available Gain [Note 2]
V
CE
= 1.0 V, I
C
= 1.0 mA, f = 1.0 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.0 GHz
Minimum Noise Figure
V
CE
= 1.0 V, I
C
= 1.0 mA, f = 1.0 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.0 GHz
Associated Gain at Minimum NF
V
CE
= 1.0 V, I
C
= 1.0 mA, f = 1.0 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.0 GHz
Output Power at 1.0 dB Gain Compression [Note 3] (V
CE
= 3.0 V,
I
C
= 3.0 mA, f = 1.0 GHz)
Output Third Order Intercept [Note 3] (V
CE
= 3.0 V, I
C
= 3.0 mA,
f = 1.0 GHz)
NOTES:
1. Pulse width
≤300 µs,
duty cycle
≤2%
pulsed.
2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
S 21
S 21
K
"
K2
*
1
if K
u
1, MSG
+
, if K
t
1
MAG
+
S 12
S 12
|
|,
|
|
3. Z
in
= 50
Ω
and Z
out
matched for optimum IP3.
2
MOTOROLA
For More Information On This Product,
RF PRODUCTS DEVICE DATA
Go to: www.freescale.com
LAST ORDER: 03AUG01
LAST SHIP: 26MAR02
Characteristic
Symbol
Min
Typ
Max
Unit
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á Á
Freescale Semiconductor, Inc.
MRF1047T1
10
0.8
C, CAPACITANCE (pF)
0.6
0.4
C
cb
0.2
0
C
ob
1.0
C IB , INPUT CAPACITANCE (pF)
0.8
C
ib
0.6
0.4
0.2
0
f = 1.0 MHz
f = 1.0 MHz
0
2.0
4.0
6.0
V
CB
, REVERSE VOLTAGE
8.0
10
0
0.25
0.75
0.5
1.0
V
EB
, EMITTER-BASE VOLTAGE
1.25
1.5
Freescale Semiconductor, Inc...
190
Figure 3. DC Current Gain
versus Collector Current
f
τ
, GAIN BANDWIDTH PRODUCT (GHz)
13
11
9.0
7.0
5.0
3.0
1.0
0.1
Figure 4. Gain–Bandwidth Product
versus Collector Current
3.0 V
f = 1.0 GHz
1.0 V
LIFETIME BUY
170
h FE , DC CURRENT GAIN
150
130
110
90
70
50
1.0
V
CE
= 1.0 V
10
I
C
, COLLECTOR CURRENT (mA)
100
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 5. Functional Circuit Schematic
V
BE
V
CE
RF Output
RF Input
Bias
Network
Slug Tuner
Slug Tuner
Bias
Network
MOTOROLA RF PRODUCTS DEVICE DATA
Information On This Product,
For More
3
Go to: www.freescale.com
LAST ORDER: 03AUG01
LAST SHIP: 26MAR02
Figure 1. Capacitance
versus Voltage
Figure 2. Input Capacitance
versus Voltage
Freescale Semiconductor, Inc.
MRF1047T1
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S 21 | 2, FORWARD INSERTION GAIN (dB)
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S 21 | 2, FORWARD INSERTION GAIN (dB)
24
22
20
18
16
14
12
10
8.0
6.0
4.0
2.0
0
0.1
28
24
20
16
12
V
CE
= 1.0 V
I
C
= 1.0 mA
MSG
MSG
V
CE
= 3.0 V
I
C
= 3.0 mA
|S
21
|
2
MAG
|S
21
|
2
MAG
8.0
4.0
0
0.1
1.0
f, FREQUENCY (GHz)
1.0
f, FREQUENCY (GHz)
10
10
Freescale Semiconductor, Inc...
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S 21 | 2, FORWARD INSERTION GAIN (dB)
LIFETIME BUY
20
18
16
14
12
10
8.0
6.0
Figure 8. Maximum Stable/Available Gain and
Forward Insertion Gain versus Collector Current
V
CE
= 1.0 V
f = 1.0 GHz
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S 21 | 2, FORWARD INSERTION GAIN (dB)
20
18
16
14
12
10
Figure 9. Maximum Stable/Available Gain and
Forward Insertion Gain versus Collector Current
V
CE
= 3.0 V
f = 1.0 GHz
MAG
MSG
MSG
MAG
|S
21
|
2
|S
21
|
2
6.0
4.0
0.1
1.0
10
100
4.0
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
20
G NF , ASSOCIATED GAIN (dB)
18
16
14
12
10
Figure 10. Minimum Noise Figure and
Associated Gain versus Frequency
V
CE
= 1.0 V
I
C
= 1.0 mA
5.0
NFmin, MINIMUM NOISE FIGURE (dB)
G NF , ASSOCIATED GAIN (dB)
4.0
3.0
2.0
26
22
18
14
10
Figure 11. Minimum Noise Figure and
Associated Gain versus Frequency
V
CE
= 3.0 V
I
C
= 3.0 mA
5.0
4.0
3.0
2.0
NFmin, MINIMUM NOISE FIGURE (dB)
G
NF
G
NF
8.0
6.0
4.0
2.0
0
0.1
1.0
f, FREQUENCY (GHz)
NF
min
1.0
0
10
NF
min
1.0
0
10
6.0
0.1
1.0
f, FREQUENCY (GHz)
4
MOTOROLA
For More Information On This Product,
RF PRODUCTS DEVICE DATA
Go to: www.freescale.com
LAST ORDER: 03AUG01
8.0
LAST SHIP: 26MAR02
Figure 6. Maximum Stable/Available Gain and
Forward Insertion Gain versus Frequency
Figure 7. Maximum Stable/Available Gain and
Forward Insertion Gain versus Frequency
Freescale Semiconductor, Inc.
MRF1047T1
20
G NF , ASSOCIATED GAIN (dB)
18
16
14
12
10
NFmin, MINIMUM NOISE FIGURE (dB)
G NF , ASSOCIATED GAIN (dB)
18
16
14
12
10
G
NF
4.0
3.0
2.0
1.0
0
100
4.0
3.0
2.0
1.0
0
100
G
NF
8.0
6.0
4.0
2.0
0
0.1
NF
min
1.0
10
8.0
6.0
4.0
2.0
0
0.1
NF
min
1.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Freescale Semiconductor, Inc...
Figure 14. Output Third Order Intercept and Output Power
at 1.0 dB Gain Compression versus Collector Current
30
25
20
15
10
5.0
0
-5.0
-10
0.1
1.0
10
P
1dB
V
CE
= 3.0 V
f = 1.0 GHz
Z
in
= 50
Ω
Z
out
matched for
optimum IP3
100
LIFETIME BUY
THIRD ORDER INTERCEPT AND
1.0 dB COMPRESSION POINT (dBm)
OIP
3
NFmin, MINIMUM NOISE FIGURE (dB)
V
CE
= 1.0 V
f = 1.0 GHz
5.0
20
V
CE
= 3.0 V
f = 1.0 GHz
5.0
I
C
, COLLECTOR CURRENT (mA)
MOTOROLA RF PRODUCTS DEVICE DATA
Information On This Product,
For More
5
Go to: www.freescale.com
LAST ORDER: 03AUG01
LAST SHIP: 26MAR02
Figure 12. Minimum Noise Figure and
Associated Gain versus Collector Current
Figure 13. Minimum Noise Figure and
Associated Gain versus Collector Current
