MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
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by MRF18030B/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030BLR3
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18030BLSR3
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1930 - 1990 MHz.
•
Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power
•
Excellent Thermal Stability
•
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel.
1.93 - 1.99 GHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF18030BLR3
Freescale Semiconductor, Inc...
CASE 465F - 04, STYLE 1
NI - 400S
MRF18030BLSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.1
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 5
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
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MRF18030BLR3 MRF18030BLSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, 50 ohm system unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
—
—
3
3.9
0.29
2
4
4.5
0.4
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture) (2)
Output Power, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
Common - Source Amplifier Power Gain @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
Input Return Loss @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1930 - 1990 MHz)
Output Mismatch Stress @ 30 W
(V
DD
= 26 Vdc, I
DQ
= 250 mA, f1 = 1930 - 1990 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
(2) Device specifications obtained on a Production Test Fixture.
C
rss
—
1.3
—
pF
P1dB
G
ps
η
IRL
Ψ
27
13
46.5
—
30
14
50
- 12
—
—
—
-9
Watts
dB
%
dB
No Degradation In Output Power
Before and After Test
MRF18030BLR3 MRF18030BLSR3
2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
DD
C8
V
GG
R2
Z9
R3
C7
R1
C4
Z4
RF
INPUT
Z1
C1
Z2
C2
Z3
DUT
C5
Z5
Z6
C3
Z7
C6
Z8
RF
OUTPUT
+
C9
Freescale Semiconductor, Inc...
C1
C2
C3
C4, C5
C6, C7, C8
C9
R1
R2, R3
Z1
1.8 pF, 100B Chip Capacitor
0.8 pF, 100B Chip Capacitor
0.8 pF, 100B Chip Capacitor
1.2 pF, 100B Chip Capacitors
8.2 pF, 100B Chip Capacitors
220
mF,
63 V Electrolytic Capacitor
1.0 kΩ, 1/8 W Chip Resistor (0805)
10 kΩ, 1/8 W Chip Resistors (0805)
0.496″ x 0.087″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
1.022″ x 0.087″ Microstrip
0.257″ x 0.633″ Microstrip
0.189″ x 0.394″ Microstrip
0.335″ x 0.394″ Microstrip
0.616″ x 0.087″ Microstrip
0.845″ x 0.087″ Microstrip
0.366″ x 0.087″ Microstrip
≈0.500″
x 0.087″ Microstrip
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
VBIAS
R2 R3
C7
C1
C2
C3
CUTOUT AREA
C5
C8
R1
C4
C9
VSUPPLY
C6
MRF18030B
Ground
(bias)
Ground
(supply)
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18030BLR3 MRF18030BLSR3
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
16
15
G ps , POWER GAIN (dB)
14
13
12
IRL @ 15 W
11
10
1850
V
DD
= 26 Vdc
I
DQ
= 250 mA
T = 25_C
1900
1950
f, FREQUENCY (MHz)
2000
−25
−30
2050
G
ps
@ 15 W
G
ps
@ 30 W
0
Pout , OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
−5
−10
−15
−20
40
35
30
25
20
0.5 W
15
10
5
0
1880
1900
1920
1940
1960
1980
2000
2020
0.25 W
V
DD
= 26 Vdc
I
DQ
= 250 mA
T = 25_C
P
in
= 2 W
1W
IRL @ 30 W
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
Figure 4. Output Power versus Frequency
16
I
DQ
= 400 mA
15
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
300 mA
14
200 mA
13
12
100 mA
11
10
0.1
1
V
DD
= 26 Vdc
f = 1960 MHz
T = 25_C
10
100
15
T = 25_C
14
13
12
11
10
9
0.1
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 1960 MHz
1
10
100
55_C
85_C
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
15
16
15
G ps , POWER GAIN (dB)
G
ps
14
13
12
h
11
10
100
0.1
1
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 1960 MHz
T = 25_C
10
60
50
40
30
20
10
0
100
η
, DRAIN EFFICIENCY (%)
14
G ps , POWER GAIN (dB)
13
12
30 V
I
DQ
= 250 mA
f = 1960 MHz
T = 25_C
1
10
P
out
, OUTPUT POWER (WATTS)
28 V
26 V
V
DD
= 22 V
24 V
11
10
P
out
, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18030BLR3 MRF18030BLSR3
4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Z
o
= 25
Ω
f = 2110 MHz
Z
load
f = 1710 MHz
f = 2110 MHz
f = 1710 MHz
Z
source
Freescale Semiconductor, Inc...
V
DD
= 26 V, I
DQ
= 250 mA, P
out
= 30 W (CW)
f
MHz
1710
1785
1805
1840
1880
1960
1990
2110
Z
source
Ω
2.92 - j8.24
3.84 - j9.75
4.15 - j10.38
4.04 - j10.22
6.12 - j12.29
6.20 - j12.29
8.61 - j12.10
15.19 - j11.85
Z
load
Ω
4.18 - j9.06
4.59 - j9.46
4.98 - j9.06
6.10 - j7.63
5.83 - j6.89
5.55 - j6.33
5.93 - j6.66
3.82 - j5.33
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18030BLR3 MRF18030BLSR3
5
