Freescale Semiconductor
Technical Data
Document Number: MRF21180
Rev. 6, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
•
Typical 2 - Carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — - 41 dBc
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency, and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF21180R6
2110 - 2170 MHz, 170 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
380
2.17
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.46
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21180R6
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 1700 mAdc)
Drain- Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.6
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
—
3.9
0.18
6
4
5
0.22
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system)
2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
(continued)
G
ps
11
12.1
—
dB
η
19
22
—
%
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 39
dBc
IRL
—
- 12
-9
dB
MRF21180R6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system)
(continued)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Input Return Loss
(V
DD
= 28 Vdc, P
out
= 170 W, I
DQ
= 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
P
out
, 1 dB Compression Point
(V
DD
= 28 Vdc, I
DQ
= 1700 mA, f = 2170 MHz)
1. Measurement made with device in push - pull configuration.
G
ps
—
12
—
dB
Symbol
Min
Typ
Max
Unit
η
—
33
—
%
IMD
—
- 30
—
dBc
IRL
—
- 12
—
dB
P1dB
—
180
—
W
MRF21180R6
RF Device Data
Freescale Semiconductor
3
V
GG
R1
+
C23
C15
R3
+
B1
Z13
C11
C5
Z9
Z11
Z15
C4
Z17
C8
C9
C14
C18
+
C19
+
C21
V
DD
RF
INPUT
Z1
Z2
Z3
C1
Z5
Z7
R5
DUT
Z19
Z20
RF
OUTPUT
Z4
C2
Z6
Z8
V
GG
R2
+
C24
C16
R4
B2
Z10
Z12
Z16
C3
Z18
Z14
V
DD
+
C7
C10
C13
C17
+
C20
+
C22
C12
C6
Figure 1. MRF21180 Test Circuit Schematic
Table 5. MRF21180 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10
C11, C12, C13, C14
C15, C16, C17, C18
C19, C20
C21, C22, C23, C24
N1, N2
R1, R2, R3, R4
R5
Z1, Z20
Z2, Z19
Z3, Z18
Z4, Z17
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
WB1, WB2, WB3, WB4
Board
PCB
Description
Short Ferrite Beads
30 pF Chip Capacitors
5.6 pF Chip Capacitors
10
μF
Tantalum Capacitors
1000 pF Chip Capacitors
0.1
μF
Chip Capacitors
1.0
μF
Tantalum Capacitors
22
μF
Tantalum Capacitors
Type N Flange Mounts
10
Ω,
1/8 W Chip Resistors
1.0 kΩ, 1/8 W Chip Resistor
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Wear Blocks
0.030″ Glass Teflon®
Etched Circuit Boards
RF-35,
ε
r
= 3.50
MRF21180 Rev. 4
Taconic
CMR
0.790″ x 0.065″
0.830″ x 0.112″
0.145″ x 0.065″
1.700″ x 0.065″
0.340″ x 0.065″
0.455″ x 0.600″
0.980″ x 0.035″
0.510″ x 0.645″
0.770″ x 0.058″
0.280″ x 0.065″
Part Number
2743019447
100B300JCA500X
100B5R6JCA500X
T495X106K035AS4394
100B102JCA500X
CDR33BX104AKWS
T491C105M050
T491X226K035AS4394
3052-1648-10
Manufacturer
Fair Rite
ATC
ATC
Kemet
ATC
Kemet
Kemet
Kemet
Omni Spectra
MRF21180R6
4
RF Device Data
Freescale Semiconductor
C19
C14
R4
C15C11
B1
R3
C5
C8 C10
C18
C21
C22
C1
R5
WB4
WB3
C4
C2
C3
WB1
WB2
C23
C6
B1
R1
C20
C16 C12
R2
C17
C13
C7 C9
MRF21180
Rev. 4
C24
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21180 Test Circuit Component Layout
MRF21180R6
RF Device Data
Freescale Semiconductor
5
