MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF2628/D
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and
industrial FM equipment.
•
Compact .280 Stud Package
•
Specified 12.5 V, 175 MHz Performance
Output Power = 15 Watts
Power Gain = 12 dB Min
Efficiency = 60% Min
•
Characterized to 220 MHz
•
Load Mismatch Capability at High Line and Overdrive
MRF2628
15 W 136 – 220 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
18
36
4.0
2.5
40
0.23
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
4.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
18
36
4.0
—
—
—
—
—
—
—
—
1.0
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF2628
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
10
70
150
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
33
60
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 15 W, f = 175 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 15 W, f = 175 MHz)
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)
Gpe
η
ψ
No Degradation in Output Power
12
60
13
68
—
—
dB
%
RFC2
+12.5 V
+
C11
L7
R2
L4
RFC1
L1
C1
C2
C3
C4
C5
C6
C7
C8
C9
L2
R1
L3
D.U.T.
C10
L5
L6
R3
C12
C13
C1, C10, C11 — 1000 pF Ceramic Chip Capacitor
C2 — 27 pF Mini Unelco Capacitor
C3 — 33 pF Mini Unelco Capacitor
C4, C5 — 270 pF Unelco J101 Capacitor
C6, C9 — 18 pF Mini Unelco Capacitor
C7 — 91 pF Mini Unelco Capacitor
C8 — 68 pF Mini Unelco Capacitor
C12 — 0.1
µF
Monolythic Capacitor
C13 — 100
µF,
15 V Electrolytic
L1 — 3 Turns #18 AWG, 3/16″ ID
L2 — 1–1/8″ #18 AWG into 1/2″ High Loop
L3 — Copper Pad, 0.200 x 0.400 x 0.060
L4 — 1/4″ #18 AWG into 1/8″ High Loop
L5 — 3 Turns #24 AWG Enameled, 3/32″ ID
L6 — 6 Turns #24 AWG Enameled, 3/32″ ID
L7 — 1–3/4″ #16 AWG into 3/4″ High Loop
R1 — 12
Ω,
1/2 W Carbon
R2 — 100
Ω,
1.0 W Carbon
R3 — 10
Ω,
1.0 W Carbon
RFC1 — 0.15
µH
Molded Choke
RFC2 — Ferroxcube Choke, VK200–4B
Figure 1. Broadband Circuit
MRF2628
2
MOTOROLA RF DEVICE DATA
24
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
24
f = 136 MHz
150 MHz
18
175 MHz
220 MHz
12
18
Pin = 1 W
12
0.8 W
0.6 W
0.4 W
6
VCC = 12.5 V
0
130
6
VCC = 12.5 V
0
150
170
190
210
230
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Frequency
Figure 3. Output Power versus Input Power
30
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
30
24
Pin = 1 W
24
0.75 W
18
0.5 W
12
0.25 W
Pin = 1 W
18
0.75 W
12
0.5 W
0.25 W
6
f = 220 MHz
0
5
6
7
8
9
10
11
12
13
14
15
6
f = 175 MHz
5
6
7
8
9
10
11
12
13
14
15
VCC, SUPPLY VOLTAGE (VOLTS)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
30
30
Pin = 1 W
0.75 W
18
0.5 W
0.25 W
12
Pout , OUTPUT POWER (WATTS)
24
0.75 W
Pout , OUTPUT POWER (WATTS)
Pin = 1 W
24
18
0.25 W
12
0.5 W
6
f = 150 MHz
0
5
6
7
8
9
10
11
12
13
14
15
6
f = 136 MHz
0
5
6
7
8
9
10
11
12
13
14
15
VCC, SUPPLY VOLTAGE (VOLTS)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF2628
3
16
14
G PE , POWER GAIN (dB)
12
10
8
6
4
2
0
150
155
160
165
170
INPUT VSWR
1.5:1
1.25:1
1:1
f, FREQUENCY (MHz)
η
c
Pin = 0.75 W
VCC = 12.5 V
GPE
80
70
60
50
40
175
Figure 8. Typical Performance in a Broadband Circuit
Zin
f = 136 MHz
150
175
220
Zo = 10
Ω
ZOL*
f = 136 MHz
150
175
220
VCC = 12.5 V, Pout = 15 W
f
MHz
136
150
175
220
Zin
Ohms
0.59 – j0.80
0.68 – j0.61
0.69 – j0.17
0.62 + j0.39
ZOL*
Ohms
5.07 – j4.76
5.23 – j4.14
5.26 – j3.46
5.25 – j2.46
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
Figure 9. Series Equivalent Impedance
MRF2628
4
MOTOROLA RF DEVICE DATA
η
c , COLLECTOR EFFICIENCY
PACKAGE DIMENSIONS
2
3
4
1
D
K
M
T
A
J
F
SEATING PLANE
P
8–32 NC 2A
U
S
C
DIM
A
B
C
D
E
G
J
K
M
P
S
T
U
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
7.06
7.26
6.20
6.50
14.99
16.51
5.46
5.96
1.40
1.65
1.52
–––
0.08
0.17
11.05
–––
45
_
NOM
–––
1.27
3.00
3.25
1.40
1.77
2.92
3.68
INCHES
MIN
MAX
0.278
0.286
0.244
0.256
0.590
0.650
0.215
0.235
0.055
0.065
0.060
–––
0.003
0.007
0.435
–––
45
_
NOM
–––
0.050
0.118
0.128
0.055
0.070
0.115
0.145
WRENCH FLAT
E
B
EMITTER
BASE
EMITTER
COLLECTOR
CASE 244–04
ISSUE J
MOTOROLA RF DEVICE DATA
MRF2628
5
