NXP Semiconductors
Technical Data
Document Number: MRF300AN
Rev. 0, 05/2018
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial,
scientific and medical applications and HF and VHF communications as well as
radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
Their unmatched input and output design allows for wide frequency range use
from 1.8 to 250 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
27
40.68
230
(1)
MRF300AN
MRF300BN
1.8–250 MHz, 300 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Signal Type
CW
CW
CW
Pulse
(100
sec,
20% Duty Cycle)
P
out
(W)
340 CW
330 CW
310 CW
330 Peak
G
ps
(dB)
27.3
28.2
26.0
20.4
D
(%)
80.6
79.0
76.5
75.5
G
S
81.36
(2)
Load Mismatch/Ruggedness
Frequency
(MHz)
40.68
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
> 65:1 at all
Phase
Angles
> 65:1 at all
Phase
Angles
P
in
(W)
2 Peak
(3 dB
Overdrive)
6 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
No Device
Degradation
D
D
S
D
TO-
-247-
-3L
MRF300AN
230
50
1. Measured in 40.68 MHz narrowband reference circuit (page 5).
2. Measured in 230 MHz typical narrowband fixture (page 10).
G
TO-
-247-
-3L
MRF300BN
Features
Unmatched input and output allowing wide frequency range
utilization
Two opposite pin--connection versions (A and B) to be used in
a push--pull, two--up configuration for wideband performance
G
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
Mobile radio
– VHF base stations
HF and VHF communications
Switch mode power supplies
Note: Exposed backside of the package
also serves as a source terminal
for the transistor.
S
2018 NXP B.V.
MRF300AN MRF300BN
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
–0.5, +133
–6.0, +10
50
– 65 to +150
–40 to +150
–40 to +175
272
1.82
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 76C, 300 W CW, 50 Vdc, I
DQ
= 50 mA, 40.68 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 74C, 300 W Peak, 100
sec
Pulse Width, 20% Duty Cycle,
50 Vdc, I
DQ
= 100 mA, 230 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.55
0.13
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Class
2, passes 2500 V
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
0
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 840
Adc)
Gate Quiescent Voltage
(V
DS
= 50 Vdc, I
D
= 100 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 30 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.7
—
—
—
2.2
2.5
0.16
28
2.7
—
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
—
133
—
—
—
—
1
—
10
Adc
Vdc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at
http://www.nxp.com/RF/calculators.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
MRF300AN MRF300BN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.31
104
403
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Typical Narrowband Performance – 230 MHz
(In NXP Narrowband 230 MHz Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA,
P
in
= 3 W, f = 230 MHz, 100
sec
Pulse Width, 20% Duty Cycle
Common--Source Amplifier Output Power
Drain Efficiency
Input Return Loss
P
out
D
IRL
—
—
—
330
75.5
–21
—
—
—
W
%
dB
Table 6. Load Mismatch/Ruggedness
(In NXP Narrowband 230 MHz Fixture, 50 ohm system) I
DQ
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
6 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
Table 7. Ordering Information
Device
MRF300AN
MRF300BN
MPQ = 240 devices (30 devices per tube, 8 tubes per box)
Shipping Information
Package
TO--247--3L (Pin 1: Gate,
Pin 2: Source, Pin 3: Drain)
TO--247--3L (Pin 1: Drain,
Pin 2: Source, Pin 3: Gate)
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1000
Measured with
30
mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc
C
iss
C, CAPACITANCE (pF)
MTTF (HOURS)
100
C
oss
10
8
V
DD
= 50 Vdc
I
D
= 6.2 Amps
10
7
7.8 Amps
8.7 Amps
10
6
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
Note:
Each side of device measured separately.
10
5
10
4
90
110
130
150
170
190
T
J
, JUNCTION TEMPERATURE (C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http:/www.nxp.com/RF/calculators.
Figure 1. Capacitance versus Drain-
-Source Voltage
Figure 2. MTTF versus Junction Temperature — CW
MRF300AN MRF300BN
4
RF Device Data
NXP Semiconductors
40.68 MHz NARROWBAND REFERENCE CIRCUIT (MRF300AN)
Table 8. 40.68 MHz Narrowband Performance
(In NXP Reference Circuit, 50 ohm system)
V
DD
= 50 Vdc, I
DQ
= 50 mA, P
in
= 0.5 W, CW
Frequency
(MHz)
40.68
G
ps
(dB)
28.2
D
(%)
79.0
P
out
(W)
330
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
5
