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MS1001

Si, NPN, RF POWER TRANSISTOR

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

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器件参数
参数名称
属性值
厂商名称
ADPOW
包装说明
FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
WITH DIFFUSED EMITTER RESISTORS
最大集电极电流 (IC)
20 A
基于收集器的最大容量
410 pF
集电极-发射极最大电压
18 V
配置
SINGLE
最高频带
HIGH FREQUENCY BAND
JESD-30 代码
O-PRFM-F4
元件数量
1
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
RADIAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
文档预览
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
12.5 VOLTS
IMD = -32 dBc
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
P
OUT
= 75 WATTS
G
P
= 13dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1001 is a 12.5V Class C silicon NPN transistor
designed primarily for HF communications. Diffused
emitter resistors provide infinite VSWR capability
under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Total Dissipation
Junction Temperature
Storage Temperature
Value
36
18
4.0
20
270
200
-65 to +150
Unit
V
V
V
A
W
º
C
º
C
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.65
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
25
°
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
I
C
= 50 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 5 V
Test Conditions
I
E
= 0 mA
V
BE
= 0 V
I
B
= 0 mA
I
C
= 0 mA
I
E
= 0 mA
I
C
= 5 A
Min.
36
36
18
4.0
---
20
Value
Typ.
---
---
---
---
---
---
Max.
---
---
---
---
15
200
Unit
V
V
V
V
mA
---
DYNAMIC
Symbol
P
OUT
f = 30MHz
f = 30MHz
f = 30MHz
f = 1 MHz
f1 = 30.000 MHz
Test Conditions
P
IN
= 3.8 W
P
IN
= 3.8 W
V
CC
=12.5V
V
CB
=12V
f2 = 30.001 MHz
V
CE
=12.5V
V
CE
=12.5V
I
CQ
= 100mA
Min.
75
13
-32
---
Value
Typ.
---
---
---
350
Max.
---
---
---
---
Unit
WPEP
dB
dB
C
pf
G
P
IMD*
C
OB
Condition
s
IMPEDANCE DATA
FREQ
30 MHz
P
IN
= 3.8W
V
CC
=12.5V
Z
IN
(
Ω)
0.7 + j0.75
Z
CL
(
Ω)
1.2 + j1.0
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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