140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1204
RF AND MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
•
•
•
•
•
•
CLASS C TRANSISTOR
FREQUENCY 136MHz
VOLTAGE 28V
POWER OUT 80W
POWER GAIN 9.0dB
COMMON EMITTER
DESCRIPTION:
The SD1019 is a 28 volt epitaxial silicon NPN planar transistor
designed primarily for VHF communications. This device utilizes
nichrome aluminum metallization to achieve infinite VSWR at rated
operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
35
4
9
117
+ 200
- 65 to + 150
V
V
V
A
W
°
C
°
C
Thermal Data
R
TH(j-c)
Junction-Case Thermal Resistance
1.7
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1204
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
Symbol
Test Conditions
Min.
Value
Typ.
Max.
Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
I
C
= 20 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5 V
I
E
= 0 V
I
B
= 0 mA
I
C
= 0 mA
I
E
= 0 V
I
C
= 500 Ma
65
35
4
1.5
5
V
V
V
mA
DYNAMIC
Symbol
Test Conditions
f = 136 MHz
f = 136 MHz
f = 1 MHz
VCE = 28 V
VCE = 28 V
VCB = 30 V
Min.
Value
Typ.
Max.
Units
P
OUT
G
P
C
OB
80
9
IE = 0 V
150
W
dB
PF
IMPEDANCE DATA
Freq.
Z
S
(Ω )
Ω
Z
CL
(Ω )
Ω
136 MHz
V
CE
= 28 V
P
O
= 80 W
.85 – j 0.5 W
4.5 + j 1.9 W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1204
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
