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MS1251

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

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器件:MS1251

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器件参数
参数名称
属性值
厂商名称
ADPOW
包装说明
FLANGE MOUNT, O-PXFM-F6
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
WITH DIFFUSED EMITTER RESISTOR
最大集电极电流 (IC)
6 A
基于收集器的最大容量
135 pF
集电极-发射极最大电压
18 V
配置
SINGLE
最高频带
VERY HIGH FREQUENCY BAND
JESD-30 代码
O-PXFM-F6
元件数量
1
端子数量
6
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
UNSPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
文档预览
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1251
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
175 MHz
12.5 VOLTS
P
OUT
= 45 WATTS
G
P
= 6.5 dB MINIMUM
INPUT MATCHED
COMMON EMITTER CONFIGURATION
VSWR = 20:1
DESCRIPTION:
The MS1251 is an epitaxial silicon NPN planar transistor designed
primarily for 12.5 V, Class C VHF communications. This device utilizes
diffused emitter resistors to achieve 20:1 VSWR capability at rated
operating conditions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
36
18
36
4.0
6.0
145
+200
-65 to +150
Unit
V
V
V
V
A
W
°
C
°
C
Thermal Data
Thermal
R
TH(J-C)
Junction-Case Thermal Resistance
1.2
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1251
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
25
°
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
H
FE
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 5 V
Test Conditions
I
E
= 0 mA
V
BE
= 0 V
I
B
= 0 mA
I
C
= 0 mA
I
E
= 0 mA
I
C
= 5 A
Value
Min.
36
36
18
4.0
---
20
Typ.
---
---
---
---
---
---
Max.
---
---
---
---
5
200
Unit
V
V
V
V
mA
---
DYNAMIC
Symbol
P
OUT
G
P
η
C
C
OB
Test Conditions
f = 138 - 175 MHz
f = 138 - 175 MHz
f = 138 - 175 MHz
f =1 MHz
P
IN
= 10 W
P
IN
= 10 W
P
IN
= 10 W
V
CB
= 12.5 V
V
CE
= 12.5 V
V
CE
= 12.5 V
V
CE
= 12.5 V
Value
Min.
45
6.5
50
---
Typ.
---
---
---
---
Max.
---
---
---
135
Unit
W
dB
%
pF
IMPEDANCE DATA
FREQ
175 MHz
P
IN
= 10 W
V
CE
= 12.5 V
Z
IN
(
Ω)
1.38 + j0.44
Z
CL
(
Ω)
1.70 + j0.48
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1251
TYPICAL PERFORMANCE
TYPICAL
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1251
TYPICAL PERFORMANCE (CONTINUED)
TYPICAL
(CONTINUED)
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1251
TEST CIRCUIT
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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