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MS1279

RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

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器件参数
参数名称
属性值
厂商名称
ADPOW
包装说明
POST/STUD MOUNT, O-PRPM-F4
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
WITH EMITTER BALLASTING RESISTORS
最大集电极电流 (IC)
8 A
基于收集器的最大容量
85 pF
集电极-发射极最大电压
35 V
配置
SINGLE
最高频带
VERY HIGH FREQUENCY BAND
JESD-30 代码
O-PRPM-F4
元件数量
1
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
POST/STUD MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子形式
FLAT
端子位置
RADIAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
文档预览
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1279
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
170- 230 MHz
25 VOLTS
P
OUT
= 20 WATTS
G
P
= 8.0 dB GAIN MINIMUM
GOLD METALLIZATION
INTERNAL INPUT MATCHING
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1279 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class AB operation in VHF and Band III television
transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
35
60
4.0
8.0
140
+200
-65 to +150
Unit
V
V
V
A
W
°
C
°
C
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
1.5
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1279
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
25
°
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CES
HFE
I
C
= 50mA
I
C
= 50mA
I
C
= 50mA
I
E
= 10mA
V
CE
= 50V
V
CE
= 5V
STATIC
Test Conditions
I
E
= 0mA
R
BE
= 10Ω
I
B
= 0mA
I
C
= 0mA
I
E
= 0mA
I
C
= 1A
Value
Min.
65
60
35
4.0
---
20
Typ.
---
---
---
---
---
---
Max.
---
---
---
---
5
120
Unit
V
V
V
V
mA
---
DYNAMIC
Symbol
P
OUT
G
P
IMD
3
C
OB
f = 225 MHz
f = 225 MHz
P
OUT
= 14W
f =1 MHz
Test Conditions
V
CE
= 25 W
V
CE
= 25 W
V
CE
= 25 W
V
CB
= 30 V
I
C
= 2.5 mA
I
C
= 2.5 mA
I
C
= 2.5 mA
Value
Min.
20
8.0
---
---
Typ.
---
---
-55
---
Max.
---
---
---
85
Unit
W
dB
dBc
pF
Note: * dB compression
IMPEDANCE DATA
FREQ
150 MHz
250 MHz
V
CE
= 28V
I
C
= 2.5A
P
OUT
= 20W
Z
IN
(
Ω)
1.0 + j1.0
1.0 + j2.0
Z
CL
(
Ω)
9.0 + j5.0
6.0 + j6.0
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1279
TYPICAL PERFORMANCE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS1279
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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