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MS2362

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

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器件参数
参数名称
属性值
厂商名称
ADPOW
包装说明
FLANGE MOUNT, X-CDFM-F2
Reach Compliance Code
unknow
其他特性
WITH EMITTER BALLASTING RESISTORS
外壳连接
BASE
最大集电极电流 (IC)
5.5 A
配置
SINGLE
最小直流电流增益 (hFE)
10
最高频带
L BAND
JESD-30 代码
X-CDFM-F2
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
UNSPECIFIED
封装形式
FLANGE MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
218.7 W
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
文档预览
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2362
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
80 W (typ.) IFF 1030 – 1090 MHz
75 W (min.) DME 1025 – 1150 MHz
50 W (typ.) TACAN 960 – 1215 MHz
1025 - 1150 MHz
GOLD METALLIZATION
P
OUT
= 75 WATTS
G
P
= 7.5 dB MINIMUM
INTERNAL INPUT MATCHING
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2362 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty cycles such as IFF, DME,
and TACAN. The MS2362 utilizes internal impedance matching for improved broadband
performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
65
65
3.5
5.5
218.7
200
-65 to +150
Unit
V
V
V
A
W
°
C
°
C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS2362
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.8
°
C/W
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25° C)
25
°
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
h
FE
I
C
= 10 mA
I
C
= 25 mA
I
E
= 10 mA
V
CE
= 50 V
V
CE
= 5 V
Test Conditions
I
E
= 0 mA
V
BE
= 0 V
I
C
= 0 mA
I
E
= 0 mA
I
C
= 100 mA
Min.
65
65
3.5
---
10
Value
Typ.
---
---
---
---
---
Max.
---
---
---
5
100
Unit
V
V
V
mA
---
DYNAMIC
Symbol
P
OUT
G
P
Test Conditions
f =1025 - 1150 MHz
f =1025 - 1150 MHz
f =1025 - 1150 MHz
P
IN
= 13.5 W
P
IN
= 13.5 W
P
IN
= 13.5 W
V
CE
= 50V
V
CE
= 50V
V
CE
= 50V
Min.
75
7.5
30
Value
Typ.
---
---
---
Max.
---
---
---
Unit
W
dB
%
η
C
Conditions:
Pulse Width = 10
µ
s Duty Cycle = 1%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS2362
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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