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MS4080

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, PLASTIC, M113, 4 PIN

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
包装说明
0.380 INCH, PLASTIC, M113, 4 PIN
针数
4
Reach Compliance Code
unknow
ECCN代码
EAR99
配置
SINGLE
最小漏源击穿电压
60 V
最大漏极电流 (Abs) (ID)
2.5 A
最大漏极电流 (ID)
2.5 A
FET 技术
METAL-OXIDE SEMICONDUCTOR
最高频带
ULTRA HIGH FREQUENCY BAND
JESD-30 代码
O-XRFM-F4
JESD-609代码
e0
元件数量
1
端子数量
4
工作模式
ENHANCEMENT MODE
最高工作温度
200 °C
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
55 W
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
FLAT
端子位置
RADIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
文档预览
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS4080
RF & MICROWAVE TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETS
Features
2 - 400 MHz
15 WATTS
28 VOLTS
13 dB MIN. AT 150 MHz
CLASS A OR AB
DESCRIPTION:
The MS4080 is a gold metallized N-Channel Enhancement Mode
MOSFET. The MS4080 is intended for use in 28 Vdc large signal
applications up to 400 MHz.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C)
°
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
STG
T
J
Parameter
Drain - Source Voltage
Drain - Gate Voltage
Gate - Source Voltage
Drain Current
Power Dissipation
Storage Temperature
Junction Temperature
Value
65
65
±
40
2.5
55
-65 to +150
200
Unit
V
V
V
A
W
°
C
°
C
Thermal Data
R
TH(j-c)
Junction - Case Thermal Resistance
3.2
°
C/W
MSC0891.PDF 11-03-98
MS4080
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
(Tcase 25
°
STATIC
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS
G
FS
C
ISS
C
OSS
C
RSS
V
GS
= 0V
V
GS
= 0V
V
GS
= 40V
V
DS
= 10V
V
DS
= 10V
V
DS
= 28V
V
DS
= 28V
V
DS
= 28V
Test Conditions
Min.
I
DS
= 5mA
V
DS
= 28V
V
DS
= 0V
I
D
= 25mA
I
D
= 250mA
V
GS
= 0V
f
= 1MHz
V
GS
= 0V
f
= 1MHz
V
GS
= 0V
f
= 1MHz
60
----
----
1.0
0.25
----
----
----
Value
Typ.
----
----
----
----
----
21.5
16.5
2.70
Max.
----
2.0
1.0
6.0
----
----
----
----
Unit
V
mA
µ
A
V
mho
pF
pF
pF
DYNAMIC
Symbol
P
IN
G
PS
η
Test Conditions
Min.
f
= 150 MHz
V
DD
= 28V
P
OUT
= 15 W(PEP)
I
DQ
= 25mA
f
= 150 MHz
V
DD
= 28V
P
OUT
= 15 W(PEP)
I
DQ
= 25mA
f
= 150 MHz
V
DD
= 28V
P
OUT
= 15 W(PEP)
I
DQ
= 25mA
----
13
50
Value
Typ.
----
----
----
Max.
0.75
----
----
Unit
W
dB
%
MSC0891.PDF 11-03-98
MS4080
Power Out vs Power In
18.0
16.0
Pout, OUTPUT POWER (WATTS)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
Pin, INPUT POWER (WATTS)
MSC0891.PDF 11-03-98
MS4080
+Vdc
BIAS
+
-
C 10
L3
L4
C 11
+
-
+28Vdc
C6
C7
C8
C9
R1
RF
INPUT
L1
C1
L2
D.U.T.
L5
R2
L6
C5
RF
OUTPUT
C2
C3
C4
R1
R2
C1
C2
C3
C4
C5
C6
C7
C8
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#20 AWG, 3 Turns, 0.25" ID, 50nH
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Fiar-Rite P/N 2943666661
Fair-Rite P/N 2943666661
#20 AWG, 6 Turns, 0.25" ID, On R2, 206nH
#20 AWG, 1.5 Turns, 0.25" ID, 25nH
MS4080 150MHz Test Circuit
MSC0891.PDF 11-03-98
MS4080
PACKAGE MECHANICAL DATA
MSC0891.PDF 11-03-98
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