MS652/MS652S
RF & MICROWAVE TRANSISTORS
ESCRIPTION
KEY FEATURES
The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. It withstands severe
mismatch under normal operating conditions.
§
512 MHz
§
12.5 Volts
§
Common Emitter
§
P
OUT
= 5 W Min.
§
G
P
= 10.0 dB Gain
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
MS652
MS652S
§
UHF Portable/Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°
C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
36
16
4.0
2
25
+200
-65 to +150
Unit
V
V
V
A
W
°C
°C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
7
°C/W
MS652.PDF 12-04-03
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS652/MS652S
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol
BV
CES
BV
CEO
BV
CBO
BV
EBO
I
CES
h
FE
I
C
= 25
mA
I
C
=
50 mA
I
C
= 25
mA
I
E
=
5 mA
V
CE
=
15 V
V
CE
=
5 V
Test Conditions
V
BE
=
0
I
B
=
0
I
E
=
0
I
C
=
0
V
BE
=
0
I
C
=
200 mA
Min.
36
16
36
4.0
10
MS652S
Typ.
Max.
Units
V
V
V
V
mA
1.0
150
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol
P
OUT
G
P
η
C
OB
Test Conditions
f
= 512 MHz
V
CC
=
12.5 V
f
= 512 MHz
V
CC
=
12.5 V
f
= 512 MHz
V
CC
=
12.5 V
P
OUT
= 5 W
f
= 1 MHz
V
CB
=
15 V
Min.
5
10
60
MS652S
Typ.
Max.
Units
W
dB
%
pF
15
LARGE SIGNAL IMPEDANCE DATA
Frequency
MHz
400
440
470
512
Conditions
Z
IN
1.2 + j0.6
1.2 + j0.9
1.2 + j1.2
1.2 + j1.5
Vcc = 12.5V, Pout = 5W
Z
CL
6.5 + j6.5
7.2 + j6.0
7.7 + j5.3
8.3 + j4.5
Units
Ω
Ω
Ω
Ω
MS652.PDF 12-04-03
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS652/MS652S
RF & MICROWAVE TRANSISTORS
TEST CIRCUIT
MS652.PDF 12-04-03
Page 3
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS652/MS652S
RF & MICROWAVE TRANSISTORS
PACKAGE OUTLINE
______________________________________________________________________
MS652.PDF 12-04-03
Page 4
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
