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MSB92ASWT1

Bipolar Transistors - BJT 500mA 300V PNP

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
SC-70
包装说明
CASE 419-02, SC-70, 3 PIN
针数
3
制造商包装代码
419-04
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
25
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
极性/信道类型
PNP
最大功率耗散 (Abs)
0.15 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
30
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
50 MHz
文档预览
MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
ESD
Value
−300
−300
−5.0
500
Class 1C
Class C
Unit
Vdc
Vdc
Vdc
mAdc
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
3
2
EMITTER
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous
ESD Rating:
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
−55
to +150
Unit
mW
°C
°C
1
MARKING DIAGRAM
D3 M
G
G
1
MSB92ASWT1G
Dx
M
G
D5 M
G
G
MSB92AS1WT1G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MSB92ASWT1G
MSB92AS1WT1G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
December, 2010
Rev. 5
1
Publication Order Number:
MSB92ASWT1/D
MSB92ASWT1G, MSB92AS1WT1G
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
=
−100
mAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
=
−100
mAdc,
I
E
= 0)
Collector-Base Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
=
−3.0
Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc)
(V
CE
=
−10
Vdc, I
C
=
−10
mAdc)
(V
CE
=
−10
Vdc, I
C
=
−30
mAdc)
Collector-Emitter Saturation Voltage (Note 2)
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
Base−Emitter Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
SMALL SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 20 MHz)
Collector−Base Capacitance
(V
CB
=
−20
Vdc, I
E
= 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width
300
ms,
D.C.
2%.
f
T
C
cb
50
6.0
MHz
pF
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
−300
−300
−5.0
Max
−0.25
−0.1
Unit
Vdc
Vdc
Vdc
mA
mA
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
120
40
25
200
−0.5
−0.9
Vdc
Vdc
http://onsemi.com
2
MSB92ASWT1G, MSB92AS1WT1G
TYPICAL CHARACTERISTICS
400
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
300
150°C
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
25°C
I
C
/I
B
= 10
150°C
200
25°C
100
−55°C
0
0.0001
0.001
0.01
0.1
−55°C
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
1.0
V
BE(sat)
, BASE−EMITT SATURATION
VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
150°C
25°C
I
C
/I
B
= 10
−55°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
V
CE
= 5 V
Figure 2. V
CE(sat)
Curve
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
−55°C
25°C
150°C
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. V
BE(sat)
Curve
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1000
f
T
, CURRENT−GAIN BANDWIDTH
PRODUCT
V
CE
= 20 V
T
A
= 25°C
100
2.0
Figure 4. V
BE(on)
Curve
T
A
= 25°C
1.6
1.2
0.8
0.4
I
C
= 50 mA
I
C
= 10 mA
10
0.1 mA
0.001
1.0 mA
0.01
0.1
1
10
100
1
0.1
1
10
100
0
0.0001
I
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 5. Current−Gain Bandwidth Product
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
MSB92ASWT1G, MSB92AS1WT1G
TYPICAL CHARACTERISTICS
100
T
A
= 25°C
C, CAPACITANCE (pF)
C
ib
1000
I
C
, COLLECTOR CURRENT (mA)
100
1.0 S
10
10 mS
10
C
ob
1
0.1
1
10
100
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 7. Capacitance
Figure 8. Safe Operating Area
http://onsemi.com
4
MSB92ASWT1G, MSB92AS1WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
e1
3
H
E
1
2
E
b
e
A
0.05 (0.002)
A1
A2
L
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
5
MSB92ASWT1/D
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