与MSM2128-20RS相近的元器件有:MSM2128-1AS、MSM2128-12RS。描述及对比如下:
| 型号 |
MSM2128-20RS |
MSM2128-1AS |
MSM2128-12RS |
| 描述 |
Standard SRAM, 2KX8, 200ns, NMOS, PDIP24, DIP-24 |
Standard SRAM, 2KX8, 200ns, MOS, CDIP24 |
Standard SRAM, 2KX8, 120ns, NMOS, PDIP24, DIP-24 |
| 是否Rohs认证 |
不符合 |
不符合 |
不符合 |
| Objectid |
1167350591 |
1167350590 |
1167350587 |
| 包装说明 |
DIP, DIP24,.6 |
DIP, DIP24,.6 |
DIP, DIP24,.6 |
| Reach Compliance Code |
unknown |
unknown |
unknown |
| ECCN代码 |
EAR99 |
EAR99 |
EAR99 |
| 最长访问时间 |
200 ns |
200 ns |
120 ns |
| I/O 类型 |
COMMON |
COMMON |
COMMON |
| JESD-30 代码 |
R-PDIP-T24 |
R-XDIP-T24 |
R-PDIP-T24 |
| JESD-609代码 |
e0 |
e0 |
e0 |
| 内存密度 |
16384 bit |
16384 bit |
16384 bit |
| 内存集成电路类型 |
STANDARD SRAM |
STANDARD SRAM |
STANDARD SRAM |
| 内存宽度 |
8 |
8 |
8 |
| 端子数量 |
24 |
24 |
24 |
| 字数 |
2048 words |
2048 words |
2048 words |
| 字数代码 |
2000 |
2000 |
2000 |
| 工作模式 |
ASYNCHRONOUS |
ASYNCHRONOUS |
ASYNCHRONOUS |
| 最高工作温度 |
70 °C |
70 °C |
70 °C |
| 组织 |
2KX8 |
2KX8 |
2KX8 |
| 输出特性 |
3-STATE |
3-STATE |
3-STATE |
| 封装主体材料 |
PLASTIC/EPOXY |
CERAMIC |
PLASTIC/EPOXY |
| 封装代码 |
DIP |
DIP |
DIP |
| 封装等效代码 |
DIP24,.6 |
DIP24,.6 |
DIP24,.6 |
| 封装形状 |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| 封装形式 |
IN-LINE |
IN-LINE |
IN-LINE |
| 并行/串行 |
PARALLEL |
PARALLEL |
PARALLEL |
| 电源 |
5 V |
5 V |
5 V |
| 认证状态 |
Not Qualified |
Not Qualified |
Not Qualified |
| 最大压摆率 |
0.1 mA |
0.145 mA |
0.12 mA |
| 标称供电电压 (Vsup) |
5 V |
5 V |
5 V |
| 表面贴装 |
NO |
NO |
NO |
| 技术 |
NMOS |
MOS |
NMOS |
| 温度等级 |
COMMERCIAL |
COMMERCIAL |
COMMERCIAL |
| 端子面层 |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| 端子形式 |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
| 端子节距 |
2.54 mm |
2.54 mm |
2.54 mm |
| 端子位置 |
DUAL |
DUAL |
DUAL |
| 功能数量 |
1 |
- |
1 |
| 最大供电电压 (Vsup) |
5.5 V |
- |
5.5 V |
| 最小供电电压 (Vsup) |
4.5 V |
- |
4.5 V |