型号
- 型号
- 关键词
| 型号 | MSM41256-15RS | MSM41256-10RS | MSM41256-12JS |
|---|---|---|---|
| 描述 | Nibble Mode DRAM, 256KX1, 150ns, MOS, PDIP16 | Nibble Mode DRAM, 256KX1, 100ns, MOS, PDIP16 | Nibble Mode DRAM, 256KX1, 120ns, MOS, PQCC18 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| Objectid | 1167316310 | 1167316304 | 1167316306 |
| 包装说明 | DIP, DIP16,.3 | DIP, DIP16,.3 | QCCJ, LDCC18,.33X.53 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 150 ns | 100 ns | 120 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-PDIP-T16 | R-PDIP-T16 | R-PQCC-J18 |
| JESD-609代码 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM |
| 内存宽度 | 1 | 1 | 1 |
| 端子数量 | 16 | 16 | 18 |
| 字数 | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 |
| 最高工作温度 | 70 °C | 70 °C | 70 °C |
| 组织 | 256KX1 | 256KX1 | 256KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | QCCJ |
| 封装等效代码 | DIP16,.3 | DIP16,.3 | LDCC18,.33X.53 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | CHIP CARRIER |
| 电源 | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 256 | 256 | 256 |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES |
| 技术 | MOS | MOS | MOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | J BEND |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | QUAD |
