Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0022-17-41
¡ Semiconductor
MSM514100D/DL
¡ Semiconductor
This version: Jan. 1998
MSM514100D/DL
Previous version: May 1997
4,194,304-Word
¥
1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514100D/DL is a 4,194,304-word
¥
1-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514100D/DL is available in a 26/20-pin plastic SOJ, 20-
pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514100DL (the low-power version) is specially
designed for lower-power applications.
FEATURES
• 4,194,304-word
¥
1-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27)
(Product : MSM514100D/DL-xxSJ)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514100D/DL-xxZS)
26/20-pin 300 mil plastic TSOP
(TSOPII26/20-P-300-1.27-K) (Product : MSM514100D/DL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514100D/DL-50
MSM514100D/DL-60
MSM514100D/DL-70
Access Time (Max.)
t
RAC
50 ns
60 ns
70 ns
t
AA
25 ns
30 ns
35 ns
t
CAC
13 ns
15 ns
20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
550 mW
495 mW
440 mW
5.5 mW/
1.1 mW (L-version)
1/17
¡ Semiconductor
MSM514100D/DL
D
IN
1
WE
2
RAS
3
NC 4
A10 5
A0 9
A1 10
A2 11
A3 12
V
CC
13
PIN CONFIGURATION (TOP VIEW)
26 V
SS
25 D
OUT
24
CAS
23 NC
22 A9
18 A8
17 A7
16 A6
15 A5
14 A4
A9 1
D
OUT
3
D
IN
5
RAS
7
NC 9
A0 11
A2 13
V
CC
15
A5 17
A7 19
2
CAS
4 V
SS
6
WE
8 A10
10 NC
12 A1
14 A3
16 A4
18 A6
20 A8
D
IN
1
WE
2
RAS
3
NC 4
A10 5
A0 9
A1 10
A2 11
A3 12
V
CC
13
26/20-Pin Plastic SOJ
20-Pin Plastic ZIP
26/20-Pin Plastic TSOP
(K Type)
26 V
SS
25 D
OUT
24
CAS
23 NC
22 A9
18 A8
17 A7
16 A6
15 A5
14 A4
Pin Name
A0 - A10
RAS
CAS
D
IN
D
OUT
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input
Data Output
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
2/17
¡ Semiconductor
MSM514100D/DL
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
11
Column
Address
Buffers
11
Column
Decoders
Write
Clock
Generator
WE
A0 - A10
Internal
Address
Counter
Refresh
Control Clock
Sense
Amplifiers
I/O
Selector
Output
Buffer
D
OUT
11
Row
Address
Buffers
11
Row
De-
coders
Word
Drivers
Memory
Cells
Input
Buffer
D
IN
V
CC
On Chip
V
BB
Generator
V
SS
3/17
¡ Semiconductor
MSM514100D/DL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A10, D
IN
)
Input Capacitance (RAS,
CAS, WE)
Output Capacitance (D
OUT
)
Symbol
C
IN1
C
IN2
C
OUT
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
6
7
7
Unit
pF
pF
pF
4/17
模拟电子