Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
PIN3
Collector
(Output)
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
PIN2
base
(Input)
R1
R2
1
2
PIN2
Emitter
(Ground)
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Value
625
–65 to +150
260
10
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Unit
°C/W
°C
°C
Sec
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θ
JA
T
J
, T
stg
T
L
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2111RT1
6A
10
10
MUN2112RT1
6B
22
22
MUN2113RT1
6C
47
47
MUN2114RT1
6D
10
47
(2)
6E
10
MUN2115RT1
MUN2116RT1
(2)
6F
4.7
6G
1.0
1.0
MUN2130RT1
(2)
(2)
MUN2131RT1
6H
2.2
2.2
MUN2132RT1
(2)
6J
4.7
4.7
MUN2133RT1
(2)
6K
4.7
47
MUN2134R T1
(2)
6L
22
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
8 8
P1–1/7
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
CBO
I
CEO
I
EBO
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
V
CE(sat)
-
-
-
V
OL
-
-
0.2
-
-
-
0.25
0.25
0.25
Vdc
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
250
250
5.0
15
27
140
130
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
Unit
nAdc
nAdc
mAdc
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
MUN2111RT1
(V
EB
= 6.0 V, I
C
= 0)
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
=2.0mA, I
B
=0)
(3)
V
(BR)CBO
V
(BR)CEO
h
FE
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(3)
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 0.3 mA)
MUN2111RT1 MUN2112RT1
MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1
(I
C
= 10 mA, I
B
= 5.0 mA)
MUN2131RT1
(I
C
= 10 mA, I
B
= 1.0 mA)
MUN2116RT1 MUN2132RT1
MUN2134RT1
Output Voltage (on)
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0kΩ)
MUN2111RT1
MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
MUN2134RT1
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0kΩ)
MUN2113RT1
-
-
0.2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P1–2/7
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0V, V
B
= 0.5 V, R
L
= 1.0kΩ)
(V
CC
= 5.0V, V
B
= 0.050 V, R
L
=1.0kΩ)
MUN2130RT1
(V
CC
= 5.0V, V
B
= 0.25 V, R
L
=1.0kΩ)
MUN2115RT1
MUN2116RT1
MUN2131RT1
MUN2132RT1
Input Resistor
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Resistor Ratio MUN2111RT1 MUN2112RT1 MUN2113RT1
MUN2114RT1
MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1
MUN2133RT1
MUN2134RT1
Symbol
V
OH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
0.38
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
0.47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
0.56
kΩ
R
1
/R
2
P1–3/7
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2111RT1
P
D
, POWER DISSIPATION (MILLIWATTS)
250
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
=10
T
A
= –25°C
200
25°C
150
0.1
75°C
100
50
R
θJA
= 625°C/W
0
–50
0
50
10
150
0.01
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
h
FE
, DC CURRENT GAIN (NORMALIZED)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
1000
V
CE
= 10 V
4
C ob , CAPACITANCE (pF)
f = 1 MHz
l
E
= 0 V
3
T
A
= 25°C
T
A
=75°C
25°C
100
–25°C
2
1
10
1
10
100
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
75°C
25°C
100
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
10
T
A
= –25°C
1
10
T
A
= –25°C
25°C
75°C
0.1
1
0.01
0.001
0
1
2
3
4
5
6
V
O
= 5 V
0.1
7
8
9
10
0
10
20
30
40
50
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P1–4/7
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2112RT1
10
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
I
C
/I
B
=10
T
A
= –25°C
25°C
75°C
1
V
CE
= 10 V
T
A
=75°C
25°C
100
–25°C
0.1
0.01
0
20
40
60
80
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
4
100
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
f = 1 MHz
l
E
= 0 V
3
75°C
10
25°C
T
A
= –25°C
T
A
= 25°C
1
2
0.1
1
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
in
, INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= –25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
P1–5/7
