MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
•
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
R1
PIN2 R2
BASE
(INPUT)
PIN1
EMITTER
(GROUND)
PIN3
COLLECTOR
(OUTPUT)
MUN2211T1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
2
1
CASE 318D–03, STYLE 1
(SC–59)
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Symbol
VCBO
VCEO
IC
PD
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R
θJA
TJ, Tstg
TL
625
– 65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
Marking
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
2–738
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
ICBO
ICEO
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
—
—
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (IC = 10
µA,
IE = 0)
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
—
60
100
140
140
350
350
5.0
15
30
200
150
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
VCE(sat)
VOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–739
MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS
(Continued)
(TA = 25°C unless otherwise noted)
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2215T1
MUN2216T1
MUN2233T1
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2211T1/MUN2212T1/MUN2213T1
MUN2214T1
MUN2215T1/MUN2216T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
Symbol
VOH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
0.38
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
0.47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
0.56
k
Ω
Resistor Ratio
R1/R2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
R
θJA
= 625°C/W
50
0
– 50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
2–740
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = –25°C
25°C
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 10 V
TA = 75°C
25°C
–25°C
100
0.1
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
VO = 5 V
0
1
2
5
6
7
4
Vin, INPUT VOLTAGE (VOLTS)
3
8
9
10
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA = –25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–741
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2212T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = –25°C
25°C
75°C
hFE, DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = 75°C
25°C
–25°C
100
0.1
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
f = 1 MHz
IE = 0 V
TA = 25°C
100
IC, COLLECTOR CURRENT (mA)
75°C
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
1
0.01
VO = 5 V
0
0
10
20
30
40
50
0.001
0
2
4
6
8
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
2–742
Motorola Small–Signal Transistors, FETs and Diodes Device Data
