型号
- 型号
- 关键词
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6
厂商名称：IXYS
下载文档| 型号 | MWT-5SG | MWT-5GG |
|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, DIE-6 |
| 零件包装代码 | DIE | DIE |
| 包装说明 | UNCASED CHIP, R-XUUC-N5 | UNCASED CHIP, R-XUUC-N5 |
| 针数 | 6 | 6 |
| Reach Compliance Code | compliant | compliant |
| 配置 | SINGLE | SINGLE |
| 最小漏源击穿电压 | 7 V | 7 V |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | K BAND | K BAND |
| JESD-30 代码 | R-XUUC-N5 | R-XUUC-N5 |
| 元件数量 | 1 | 1 |
| 端子数量 | 5 | 5 |
| 工作模式 | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | UNCASED CHIP | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | NO LEAD | NO LEAD |
| 端子位置 | UPPER | UPPER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
