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MX29GL512FHXGI-10Q

IC FLASH 512M PARALLEL 56FBGA

器件类别:存储   

厂商名称:Macronix

厂商官网:http://www.macronix.com/en-us/Pages/default.aspx

器件标准:

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器件参数
参数名称
属性值
存储器类型
非易失
存储器格式
闪存
技术
FLASH - NOR
存储容量
512Mb (64M x 8)
写周期时间 - 字,页
100ns
访问时间
100ns
存储器接口
并联
电压 - 电源
2.7 V ~ 3.6 V
工作温度
-40°C ~ 85°C(TA)
安装类型
表面贴装
封装/外壳
56-TFBGA,CSPBGA
供应商器件封装
56-FBGA,CSP(7x9)
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MX29GL512F
MX29GL512F
DATASHEET
P/N:PM1617
REV. 1.7, FEB. 26, 2014
1
MX29GL512F
Contents
FEATURES ............................................................................................................................................................. 5
PIN CONFIGURATION ........................................................................................................................................... 6
PIN DESCRIPTION ................................................................................................................................................. 7
BLOCK DIAGRAM.................................................................................................................................................. 8
BLOCK DIAGRAM DESCRIPTION ........................................................................................................................ 9
BLOCK STRUCTURE........................................................................................................................................... 10
Table 1. MX29GL512F SECTOR ARCHITECTURE .................................................................................. 10
BUS OPERATION ................................................................................................................................................. 11
Table 2-1. BUS OPERATION ...................................................................................................................... 11
Table 2-2. BUS OPERATION ...................................................................................................................... 12
FUNCTIONAL OPERATION DESCRIPTION ....................................................................................................... 13
READ OPERATION .................................................................................................................................... 13
PAGE READ ............................................................................................................................................... 13
WRITE OPERATION .................................................................................................................................. 13
WRITE BUFFER PROGRAMMING OPERATION ...................................................................................... 13
DEVICE RESET.......................................................................................................................................... 14
STANDBY MODE ....................................................................................................................................... 14
OUTPUT DISABLE ..................................................................................................................................... 14
BYTE/WORD SELECTION ......................................................................................................................... 15
HARDWARE WRITE PROTECT ................................................................................................................ 15
ACCELERATED PROGRAMMING OPERATION ...................................................................................... 15
SECTOR PROTECT OPERATION ............................................................................................................. 15
AUTOMATIC SELECT BUS OPERATIONS ............................................................................................... 15
SECTOR LOCK STATUS VERIFICATION.................................................................................................. 15
READ SILICON ID MANUFACTURER CODE............................................................................................ 16
READ INDICATOR BIT (Q7) FOR SECURITY SECTOR ........................................................................... 16
INHERENT DATA PROTECTION ............................................................................................................... 16
COMMAND COMPLETION ........................................................................................................................ 16
LOW VCC WRITE INHIBIT ......................................................................................................................... 16
WRITE PULSE "GLITCH" PROTECTION .................................................................................................. 17
LOGICAL INHIBIT ....................................................................................................................................... 17
POWER-UP SEQUENCE ........................................................................................................................... 17
POWER-UP WRITE INHIBIT ...................................................................................................................... 17
POWER SUPPLY DECOUPLING ............................................................................................................... 17
COMMAND OPERATIONS ................................................................................................................................... 18
READING THE MEMORY ARRAY ............................................................................................................. 18
AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY ..................................................................... 18
ERASING THE MEMORY ARRAY.............................................................................................................. 19
SECTOR ERASE ........................................................................................................................................ 19
P/N:PM1617
REV. 1.7, FEB. 26, 2014
2
MX29GL512F
CHIP ERASE ............................................................................................................................................. 20
ERASE SUSPEND/RESUME ..................................................................................................................... 21
SECTOR ERASE RESUME ....................................................................................................................... 21
PROGRAM SUSPEND/RESUME............................................................................................................... 22
PROGRAM RESUME ................................................................................................................................. 22
BUFFER WRITE ABORT ............................................................................................................................ 22
AUTOMATIC SELECT OPERATIONS ........................................................................................................ 23
AUTOMATIC SELECT COMMAND SEQUENCE ....................................................................................... 23
READ MANUFACTURER ID OR DEVICE ID ............................................................................................. 23
RESET ....................................................................................................................................................... 24
ADVANCED SECTOR PROTECTION/UN-PROTECTION ......................................................................... 25
Figure 1. Advance Sector Protection/Unprotection SPB Program Algorithm .............................................. 25
Figure 2. Lock Register Program Algorithm ................................................................................................ 26
Figure 3. SPB Program Algorithm ............................................................................................................... 28
TABLE 3. COMMAND DEFINITIONS ......................................................................................................... 32
COMMON FLASH MEMORY INTERFACE (CFI) MODE ..................................................................................... 35
QUERY COMMAND AND COMMAND FLASH MEMORY INTERFACE (CFI) MODE ............................... 35
Table 4-1. CFI mode: Identification Data Values
(Note 1)
............................................................................... 35
Table 4-2. CFI mode: System Interface Data Values .................................................................................. 35
Table 4-3. CFI mode: Device Geometry Data Values ................................................................................. 36
Table 4-4. CFI mode: Primary Vendor-Specific Extended Query Data Values
........................................... 37
ELECTRICAL CHARACTERISTICS .................................................................................................................... 38
ABSOLUTE MAXIMUM STRESS RATINGS .............................................................................................. 38
OPERATING TEMPERATURE AND VOLTAGE ......................................................................................... 38
Maximum Negative Overshoot Waveform
.................................................................................................. 38
Maximum Positive Overshoot Waveform
.................................................................................................... 38
DC CHARACTERISTICS ............................................................................................................................ 39
SWITCHING TEST CIRCUITS ................................................................................................................... 40
SWITCHING TEST WAVEFORMS ............................................................................................................ 40
AC CHARACTERISTICS ............................................................................................................................ 41
WRITE COMMAND OPERATION......................................................................................................................... 43
Figure 4. COMMAND WRITE OPERATION ............................................................................................... 43
READ/RESET OPERATION ................................................................................................................................. 44
Figure 5. READ TIMING WAVEFORMS ..................................................................................................... 44
Figure 6. RESET# TIMING WAVEFORM .................................................................................................. 45
ERASE/PROGRAM OPERATION ........................................................................................................................ 46
Figure 7. AUTOMATIC CHIP ERASE TIMING WAVEFORM ...................................................................... 46
Figure 8. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART ........................................................... 47
Figure 9. AUTOMATIC SECTOR ERASE TIMING WAVEFORM................................................................ 48
Figure 10. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART ................................................... 49
P/N:PM1617
REV. 1.7, FEB. 26, 2014
3
MX29GL512F
Figure 11. ERASE SUSPEND/RESUME FLOWCHART ............................................................................ 50
Figure 12. AUTOMATIC PROGRAM TIMING WAVEFORMS ..................................................................... 51
Figure 13. ACCELERATED PROGRAM TIMING DIAGRAM ...................................................................... 51
Figure 14. CE# CONTROLLED WRITE TIMING WAVEFORM .................................................................. 52
Figure 15. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART ................................................... 53
Figure 16. SILICON ID READ TIMING WAVEFORM ................................................................................. 54
WRITE OPERATION STATUS .............................................................................................................................. 55
Figure 17. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) ................. 55
Figure 18. STATUS POLLING FOR WORD PROGRAM/ERASE ............................................................... 56
Figure 19. STATUS POLLING FOR WRITE BUFFER PROGRAM ............................................................ 57
Figure 20. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) ....................... 58
Figure 21. TOGGLE BIT ALGORITHM ....................................................................................................... 59
Figure 22. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to
word mode) ................................................................................................................................................. 60
Figure 23. PAGE READ TIMING WAVEFORM ........................................................................................... 61
Figure 24. DEEP POWER DOWN MODE WAVEFORM ........................................................................... 62
Figure 25. WRITE BUFFER PROGRAM FLOWCHART ............................................................................ 63
RECOMMENDED OPERATING CONDITIONS .................................................................................................... 64
At Device Power-Up.................................................................................................................................... 64
ERASE AND PROGRAMMING PERFORMANCE ............................................................................................... 65
DATA RETENTION ............................................................................................................................................... 65
LATCH-UP CHARACTERISTICS ......................................................................................................................... 65
PIN CAPACITANCE .............................................................................................................................................. 65
ORDERING INFORMATION ................................................................................................................................. 66
PART NAME DESCRIPTION ................................................................................................................................ 67
PACKAGE INFORMATION ................................................................................................................................... 68
REVISION HISTORY ............................................................................................................................................ 71
P/N:PM1617
REV. 1.7, FEB. 26, 2014
4
MX29GL512F
SINGLE VOLTAGE 3V ONLY FLASH MEMORY
FEATURES
GENERAL FEATURES
• 2.7 to 3.6 volt for read, erase, and program operations
• Byte/Word mode switchable
- 67,108,864 x 8 / 33,554,432 x 16
• 64KW/128KB uniform sector architecture
- 512 equal sectors
• 16-byte/8-word page read buffer
• 64-byte/32-word write buffer
• Extra 128-word sector for security
- Features factory locked and identifiable, and customer lockable
• Advanced sector protection function (Solid and Password Protect)
• Compatible with JEDEC standard
- Pinout and software compatible to single power supply Flash
PERFORMANCE
• High Performance
- Fast access time:
- MX29GL512F H/L: 100ns (VCC=3.0~3.6V), 110ns (VCC=2.7~3.6V)
- MX29GL512F U/D: 110ns/120ns (VCC=2.7~3.6V, V I/O=1.65 to Vcc)
- Page access time:
- MX29GL512F H/L: 25ns
- MX29GL512F U/D: 30ns
- Fast program time: 10us/word
- Fast erase time: 0.5s/sector
• Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 40uA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention
SOFTWARE FEATURES
• Program/Erase Suspend & Program/Erase Resume
• Status Reply
- Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)
HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
- Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state machine to read mode
• WP#/ACC input pin
- Hardware write protect pin/Provides accelerated program capability
PACKAGE
• 56-Pin TSOP
• 64-Ball LFBGA (11mm x 13mm)
• 56-Ball FBGA (7mm x 9mm)
All devices are RoHS Compliant and Halogen-free
P/N:PM1617
REV. 1.7, FEB. 26, 2014
5
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