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MXP5KE14CAE3

TVS DIODE 14V 23.2V DO204AL

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microsemi
包装说明
O-PALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
最大击穿电压
17.2 V
最小击穿电压
15.6 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
500 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
1.19 W
参考标准
IEC-61000-4-5
最大重复峰值反向电压
14 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN OVER COPPER
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MP5KE5.0A – MP5KE170CA(e3)
Screening in
reference to
MIL-PRF-19500
available
Available
500 Watt Transient Voltage Suppressor
(TVS) Protection Device
DESCRIPTION
This MP5KE5.0A – MP5KE170CA is a family of economical 500 W transient voltage
supppressors (TVS) for protecting voltage-sensitive components from destruction or
degradation. It is available in both unidirectional and bi-directional configurations as well as
RoHS compliant (annealed matte-tin finish) and upscreened, enhanced high reliability options.
The response time of their clamping time is virtually instantaneous. As a result, they may also
be used effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for
inductive switching environments and induced RFI. They can also be used for protection from
the secondary effects of lightning per IEC61000-4-5 at the class levels listed below.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional configurations
Suppresses transients up to 500 watts Peak Pulse Power (P
PP
) @ 10/1000
µs
3σ lot norm screening performed on standby current I
D
100% surge tested devices
Various screening in reference to MIL-PRF-19500 are available. Refer to
Hirel Non-Hermetic
Product Portfolio
for more details on the screening options.
(See
part nomenclature
for all options.)
High reliability controlled devices have wafer fabrication and assembly lot traceability
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant versions are available
DO-204AL
(DO-41)
Plastic
Package
Also available in:
DO-214AC package
(tabbed surface mount)
SMAJ5.0 – SMAJ170A
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Selections from 5.0 to 170 volts stand-off voltage (V
WM
)
Economical TVS series for thru-hole mounting
Similar to SA5.0 thru SA170 series
Protection from switching transients & induced RFI
Sub-nanosecond response time (unidirectional)
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MP5KE5.0A to MP5KE120A or CA
Class 2: MP5KE5.0A to MP5KE60A or CA
Class 3: MP5KE5.0A to MP5KE30A or CA
Class 4: MP5KE5.0A to MP5KE15A or CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MP5KE5.0A to MP5KE36A or CA
Class 2: MP5KE5.0A to MP5KE18A or CA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
2
RF01013, Rev. A (8/20/13)
©2013 Microsemi Corporation
Page 1 of 7
MP5KE5.0A – MP5KE170CA(e3)
MAXIMUM RATINGS
@ 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power Dissipation
10/1000 us
Steady-State Power Dissipation @ T
L
= 25 ºC 3/8 inch (10
mm) from body
Forward Voltage
Solder Temperature @ 10 s
(3)
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
P
PP
P
D
V
F
Value
-65 to +150
45
105
500
2.77
(1)
1.19
3.5
260
Unit
o
C
o
C/W
C/W
W
W
V
C
o
o
Notes:
1. At T
A
= 25 ºC when mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm.
2. With impulse repetition rate (duty factor) of 0.01 % or less (also Figure 1 and 4).
3. At 30 amp peak impulse of 8.3 ms half-sine wave (unidirectional only).
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: RoHS compliant annealed matte/tin over copper. Solderable per MIL-STD-750, method 2026.
MARKING: Body marked with part number.
POLARITY: Band denotes cathode. Bidirectional not marked.
TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.3 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
(*See
Hirel Non-Hermetic
Product Portfolio)
Point 5 kilowatt
Encapsulated
P5K
E 5.0 C
A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
5% Tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Working Standoff Voltage
(see
Electrical Characteristics
table)
RF01013, Rev. A (8/20/13)
©2013 Microsemi Corporation
Page 2 of 7
MP5KE5.0A – MP5KE170CA(e3)
Symbol
α
V(BR)
V
W M
P
PP
V
(
BR)
I
D
I
PP
V
C
I
(BR)
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR).
RF01013, Rev. A (8/20/13)
©2013 Microsemi Corporation
Page 3 of 7
MP5KE5.0A – MP5KE170CA(e3)
ELECTRICAL CHARACTERISTICS
@ 25 ºC
BREAKDOWN
VOLTAGE
V
(BR)
Min.
V
MP5KE5.0A
MP5KE6.0A
MP5KE6.5A
MP5KE7.0A
MP5KE7.5A
MP5KE8.0A
MP5KE8.5A
MP5KE9.0A
MP5KE10A
MP5KE11A
MP5KE12A
MP5KE13A
MP5KE14A
MP5KE15A
MP5KE16A
MP5KE17A
MP5KE18A
MP5KE20A
MP5KE22A
MP5KE24A
MP5KE26A
MP5KE28A
MP5KE30A
MP5KE33A
MP5KE36A
MP5KE40A
MP5KE43A
MP5KE45A
MP5KE48A
MP5KE51A
MP5KE54A
MP5KE58A
MP5KE60A
MP5KE64A
MP5KE70A
MP5KE75A
MP5KE78A
MP5KE85A
MP5KE90A
MP5KE100A
MP5KE110A
MP5KE120A
MP5KE130A
MP5KE150A
MP5KE160A
MP5KE170A
6.4
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100.0
111.0
122.0
133.0
144.0
167.0
178.0
189.0
PART
NUMBER
TEST
CURRENT
I
(BR)
RATED
STANDOFF
VOLTAGE
V
WM
V
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
MAX
STANDBY
CURRENT
I
D
@ V
WM
µA
600
600
400
150
50
25
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max.
V
7.0
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
84.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104.0
111.0
123.0
135.0
147.0
159.0
185.0
197.0
209.0
mA
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX
CLAMPING
VOLTAGE
V
C
@ I
PP
V
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
113.0
121.0
126.0
137.0
146.0
162.0
177.0
193.0
209.0
243.0
259.0
275.0
MAX PEAK
PULSE
CURRENT
I
PP
A
54.3
48.5
44.7
41.7
38.8
36.7
34.7
32.5
29.4
27.4
25.1
23.2
21.5
20.6
19.2
18.1
17.2
15.4
14.1
12.8
11.9
11.0
10.3
9.4
8.6
7.8
7.2
6.9
6.5
6.1
5.7
5.3
5.2
4.9
4.4
4.1
4.0
3.6
3.4
3.1
2.8
2.0
2.4
2.1
1.9
1.8
MAX TEMP
COEFFICIANT
OF V
(BR
)
α
V(BR)
% / °C
0.057
0.059
0.061
0.065
0.067
0.070
0.073
0.076
0.078
0.081
0.082
0.084
0.086
0.087
0.088
0.090
0.092
0.093
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.105
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
NOTES:
1.
2.
Forward voltage (V
F
) @ 35 amps peak, 8.3 ms sine wave equal to 3.5 volts max. (Excluding bidirectional).
For bidirectional construction, capacitance will be one-half that shown in
Figure 4.
RF01013, Rev. A (8/20/13)
©2013 Microsemi Corporation
Page 4 of 7
MP5KE5.0A – MP5KE170CA(e3)
GRAPHS
P
pp
– Peak Pulse Power (kW)
t
d
– Pulse Width (sec.)
FIGURE 1
Peak Pulse Power Rating Curve
Pulse Current in Percent of I
PP
t – Time – ms
Test waveform parameters: tr=10 µs, tp=1000 µs
FIGURE 2
Pulse Waveform for 10/1000 Exponential Surge
RF01013, Rev. A (8/20/13)
©2013 Microsemi Corporation
Page 5 of 7
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