DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0912B50Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Interdigitated structure provides
high emitter efficiency
•
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
•
Gold metallization realizes very
stable characteristics and excellent
lifetime
•
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
•
Input and output matching cell
allows an easier design of circuits.
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
handbook, halfpage
MZ0912B50Y
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common base class C
broadband amplifier.
MODE OF
OPERATION
Class C;
t
p
= 10
µs; δ
= 1%
f
(GHz)
V
CC
(V)
P
L
(W)
>50
G
p
(dB)
>7
η
C
(%)
>42
Z
i
/Z
L
(Ω)
see Figs 6
and 7
0.960 to 1.215 50
PINNING - SOT443A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
1
c
b
3
e
2
Top view
MAM314
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation (peak power)
storage temperature
operating junction temperature
soldering temperature
t
≤
10 s; note 1
CONDITIONS
open emitter
open base
R
BE
= 0
Ω
open collector
t
p
≤
10
µs; δ ≤
10%
T
mb
= 75
°C;
t
p
≤
10
µs; δ ≤
10%
−
−
−
−
−
−
−65
−
−
MZ0912B50Y
MIN.
MAX.
65
20
60
3
3
150
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook, halfpage
180
MGL051
Ptot
(W)
120
60
0
−
50
0
100
Tmb (°C)
200
t
p
= 10
µs; δ
= 10%; P
tot max
= 150 W.
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
T
j
= 125
°C
unless otherwise specified.
SYMBOL
R
th j-mb
R
th mb-h
Z
th j-h
Notes
1. See
“Mounting recommendations in the General part of handbook SC19a”.
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to heatsink
CONDITIONS
CW
CW; note 1
notes 1 and 2
MZ0912B50Y
MAX.
4.9
0.2
0.85
UNIT
K/W
K/W
K/W
2. Equivalent thermal impedance under nominal pulse microwave operating conditions; t
p
= 10
µs; δ
= 10%.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
V
CB
= 65 V; I
E
= 0
V
CB
= 50 V; I
E
= 0
V
CE
= 60 V; R
BE
= 0
Ω
V
EB
= 1.5 V; I
C
= 0
20
2
20
200
MAX.
mA
mA
mA
µA
UNIT
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
measured in the test jig as shown in Fig.3 and working in class C broadband
mode in pulse; note 1.
MODE OF OPERATION
Class C;
t
p
= 10
µs; δ
= 10%
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
CC
during pulse.
List of components (see Fig.3).
COMPONENT
L1, L2
L3
C1
C2
C3
C4
C5, C6
DESCRIPTION
0.65 mm diameter copper wire
−
4 turns 0.65 mm diameter
copper wire;
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
−
100 pF
10
µF;
50 V
−
0.6 to 4.5 pF
VALUE
DIMENSIONS
total length = 12 mm;
height of loop = 9 mm
int. dia. 3 mm; l = 5 mm
−
−
−
−
−
−
ATC, ref. 100A101KP50X
−
−
Erie, ref. 1250-003
Tekelec, ref. 727.1
CATALOGUE NO.
f
(GHz)
0.960 to 1.215
V
CC
(V)
(2)
50
P
L
(W)
>50
typ. 60
G
p
(dB)
>7
typ. 8
η
C
(%)
>42
typ. 44
Z
i
/Z
L
(Ω)
see Figs 6
and 7
470
µF;
63 V
−
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
handbook, full pagewidth
30 mm
30 mm
9
2
4.5
2.5
10
3
9
3
9
2
3
1
2
40
mm
0.635
20
6.5
12
5
5
0.635
11
40
mm
MCD634
handbook, full pagewidth
C3
+V
CC
C4
C2
L1
L3
C1
L2
C5
MGL064
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
Fig.3 Broadband test circuit.
1997 Feb 18
5
