AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N256S0818HDA/N256S0830HDA
Advance Information
256Kb Low Power Serial SRAMs
32K × 8 bit Organization
Overview
The AMI Semiconductor serial SRAM family
includes several integrated memory devices
including this 256Kb serially accessed Static
Random Access Memory, internally organized as
32K words by 8 bits. The devices are designed and
fabricated using AMI’s advanced CMOS
technology to provide both high-speed
performance and low power. The devices operate
with a single chip select (CS) input and use a
simple Serial Peripheral Interface (SPI) serial bus.
A single data in and data out line is used along with
a clock to access data within the devices. The
N256S08xxHDA devices include a HOLD pin that
allows communication to the device to be paused.
While paused, input transitions will be ignored.
The devices can operate over a wide temperature
range of -40
o
C to +85
o
C and can be available in
several standard package offerings.
Features
• Power Supply Options
1.8V to 3.6V
• Very low standby current
As low as 200nA
• Very low operating current
As low as 500uA
• Simple memory control
Single chip select (CS)
Serial input (SI) and serial output (SO)
• Flexible operating modes
Word read and write
Page mode (32 word page)
Burst mode (full array)
• Organization
32K x 8 bit
• Self timed write cycles
• Built-in write protection (CS high)
• HOLD pin for pausing communication
• High reliability
Unlimited write cycles
• RoHS Compliant Packages
Green SOIC and TSSOP
Device Options
Part Number
N256S0818HDA
N256S0830HDA
Density
Power
Supply (V)
1.8
3.0
Speed
(MHz)
20
25
Feature
Typical
Standby
Current
200nA
1uA
Read/Write
Operating Current
500 uA @ 1Mhz
256Kb
HOLD
1
This is a developmental specification and is subject to change without notice.
AMI Semiconductor, Inc.
N256S0818HDA/N256S0830HDA
Advance Information
Package Configurations
Pin Names
Pin Name
CS
SCK
SI
SO
HOLD
NC
V
CC
V
SS
Pin Function
Chip Select Input
Serial Clock Input
Serial Data Input
Serial Data Output
Hold Input
No Connect
Power
Ground
CS
SO
NC
VSS
1
8
VCC
HOLD
SCK
SI
SOIC
2
3
4
7
6
5
CS
SO
NC
VSS
1
8
VCC
HOLD
SCK
SI
TSSOP
2
3
4
7
6
5
Functional Block Diagram
SCK
HOLD
Clock
Circuitry
CS
Decode
Logic
SRAM
Array
Data In
Receiver
SI
SO
Data Out
Buffer
2
This is a developmental specification and is subject to change without notice.
AMI Semiconductor, Inc.
Absolute Maximum Ratings
1
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
N256S0818HDA/N256S0830HDA
Advance Information
Rating
–0.3 to V
CC
+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
260
o
C, 10sec
Unit
V
V
mW
o
C
o
C
o
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating
Current
Symbol
V
CC
V
CC
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
OH
= -0.4mA
I
OL
= 1mA
CS = V
CC
, V
IN
= 0 to V
CC
CS = V
CC
, V
OUT
= 0 to V
CC
F = 1MHz, I
OUT
= 0
F = 10MHz, I
OUT
= 0
F = 20/25MHz, I
OUT
= 0
1.8V Device
CS = V
CC
, V
IN
= V
SS
or V
CC
3V Device
CS = V
CC
, V
IN
= V
SS
or V
CC
200
1
Test Conditions
1.8V Device
3V Device
Min.
1.7
2.3
0.7 x V
CC
–0.3
V
CC
–0.5
0.2
0.5
0.5
500
4
8/10
500
3
Typ
1
Max
1.95
3.6
V
CC
+0.3
0.3 x V
CC
Unit
V
V
V
V
V
V
µA
µA
µA
mA
mA
nA
µA
Standby Current
I
SB
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25°C and are not 100% tested.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
7
7
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
3
This is a developmental specification and is subject to change without notice.
AMI Semiconductor, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N256S0818HDA/N256S0830HDA
Advance Information
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
CL = 100pF
-40 to +85
o
C
Timing
Item
Clock Frequency
Clock Rise Time
Clock Fall Time
Clock High Time
Clock Low Time
Clock Delay Time
CS Setup Time
CS Hold Time
CS Disable Time
SCK to CS
Data Setup Time
Data Hold Time
Output Valid From Clock Low
Output Hold Time
Output Disable Time
HOLD Setup Time
HOLD Hold Time
HOLD Low to Output High-Z
HOLD High to Output Valid
Symbol
f
CLK
t
R
t
F
t
HI
t
LO
t
CLD
t
CSS
t
CSH
t
CSD
t
SCS
t
SU
t
HD
t
V
t
HO
t
DIS
t
HS
t
HH
t
HZ
t
HV
10
10
10
50
0
20
10
10
10
40
25
25
25
25
50
25
5
10
10
25
0
15
1.8V Device
Min.
Max.
20
2
2
20
20
20
20
40
20
5
10
10
20
3V Device
Min.
Max.
25
2
2
Units
MHz
us
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
This is a developmental specification and is subject to change without notice.
AMI Semiconductor, Inc.
Serial Input Timing
N256S0818HDA/N256S0830HDA
Advance Information
t
CSD
CS
t
R
SCK
t
SU
SI
MSB in
t
CSS
t
HD
LSB in
t
F
t
CSH
t
SCS
t
CLD
SO
High-Z
Serial Output Timing
CS
t
LO
SCK
t
V
SO
t
DIS
MSB out
Don’t Care
LSB out
t
HI
t
CSH
SI
Hold Timing
CS
t
HS
SCK
t
HH
SO
n+2
n+1
t
HZ
SI
n+2
n+1
n
Don’t Care
n
n
High-Z
t
HS
t
HH
t
HV
n
t
SU
n-1
n-1
HOLD
5
This is a developmental specification and is subject to change without notice.
