NDD02N40, NDT02N40
N-Channel Power MOSFET
400 V, 5.5
W
Features
•
100% Avalanche Tested
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
qJC
Steady State, T
C
= 25°C (Note 1)
Continuous Drain Current R
qJC
Steady State, T
C
= 100°C (Note 1)
Power Dissipation – R
qJC
Steady State, T
C
= 25°C
Pulsed Drain Current
Continuous Source Current (Body
Diode)
Single Pulse Drain−to−Source
Avalanche Energy, I
D
= 1 A
Maximum Temperature for Soldering
Leads
Operating Junction and Storage
Temperature
Symbol
V
DSS
V
GS
I
D
I
D
P
D
I
DM
I
S
EAS
T
L
T
J
, T
STG
1.7
1.1
39
6.9
1.7
120
260
−55 to +150
NDD
400
±20
0.4
0.25
2.0
1.6
0.4
NDT
Unit
V
V
A
A
W
A
A
mJ
°C
°C
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V
(BR)DSS
400 V
R
DS(ON)
MAX
5.5
W
@ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING
DIAGRAMS
4
Drain
YWW
2N
40G
YWW
2N
40G
4
1 2
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I
S
= 1.7 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
4
2
1
3
Drain
Gate
Source
4
Drain
IPAK
CASE 369D
(Straight Lead)
STYLE 2
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDD02N40
Symbol
R
qJC
R
qJA
Value
3.2
39
96
62
151
Unit
°C/W
°C/W
1
2
3
Junction−to−Ambient Steady State
NDD02N40 (Note 4)
NDD02N40−1 (Note 3)
NDT02N40 (Note 4)
NDT02N40 (Note 5)
Y
WW
2N40
G
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces)
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
= Year
1 2 3
= Work Week
Gate Drain Source
= Device Code
= Pb−Free Package
Drain
4
SOT−223
4
CASE 318E
AYW
12
STYLE 3
3
2N40G
A
= Assembly Location
G
Y
= Year
1
2
3
W
= Work Week
Gate Drain Source
2N40
= Specific Device Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 4
Publication Order Number:
NDD02N40/D
NDD02N40, NDT02N40
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 400 V, V
GS
= 0 V
V
GS
=
±20
V
V
DS
= V
GS
, I
D
= 250
mA
Reference to 25°C, I
D
= 50
mA
V
GS
= 10 V, I
D
= 0.22 A
V
DS
= 15 V, I
D
= 0.22 A
0.8
1.6
4.6
4.5
1.1
5.5
T
J
= 25°C
T
J
= 125°C
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance
(Note 7)
Total Gate Charge (Note 7)
Gate-to-Source Charge (Note 7)
Gate-to-Drain (“Miller”) Charge
(Note 7)
Plateau Voltage
Gate Resistance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
SD
T
J
= 25°C
T
J
= 100°C
V
DD
= 200 V, I
D
= 1.7 A,
V
GS
= 10 V, R
G
= 0
W
V
DS
= 200 V, I
D
= 1.7 A, V
GS
= 10 V
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
121
16
3
5.5
0.8
1.0
3.1
8.7
V
W
ns
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
2
V
mV/°C
W
S
I
GSS
400
460
1
50
±10
mA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
RESISTIVE SWITCHING CHARACTERISTICS
(Note 8)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
5
7
14
4
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
0.9
0.8
146
V
GS
= 0 V, V
DD
= 30 V, I
S
= 1.7 A,
d
i
/d
t
= 100 A/ms
37
109
260
nC
ns
1.6
V
I
S
= 1.7 A, V
GS
= 0 V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
rr
t
a
t
b
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
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2
NDD02N40, NDT02N40
ORDERING INFORMATION
Device
NDD02N40−1G
NDD02N40T4G
NDT02N40T1G
Package
IPAK
(Pb−Free, Halogen Free)
DPAK
(Pb−Free, Halogen Free)
SOT−223
(Pb−Free, Halogen Free)
Shipping
†
75 Units / Rail
2500 / Tape & Reel
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NDD02N40, NDT02N40
TYPICAL CHARACTERISTICS
2.0
2.5
3.2 V
I
D
, DRAIN CURRENT (A)
3.0 V
2.0
V
DS
= 25 V
T
J
= −55°C
T
J
= 25°C
V
GS
= 7 V to 10 V
3.4 V to 3.5 V
I
D
, DRAIN CURRENT (A)
1.5
2.8 V
1.0
2.6 V
0.5
2.0 V
2.4 V
2.2 V
0
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1.5
T
J
= 150°C
1.0
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
12
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
11
10
9
8
7
6
5
4
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE (V)
I
D
= 0.22 A
T
J
= 25°C
12
11
10
9
8
7
6
5
4
Figure 2. Transfer Characteristics
V
GS
= 10 V
T
J
= 25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
NORMALIZED BREAKDOWN VOLTAGE (V)
2.50
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
150
V
GS
= 10 V
I
D
= 0.22 A
1.15
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 1 mA
1.10
1.05
1.00
0.95
0.90
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Normalized BVDSS with Temperature
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4
NDD02N40, NDT02N40
TYPICAL CHARACTERISTICS
1
1000
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C, CAPACITANCE (pF)
T
J
= 150°C
I
DSS
, LEAKAGE (mA)
C
ISS
100
C
OSS
10
C
RSS
0.1
T
J
= 125°C
0.01
0
50
100
150
200
250
300
350
400
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
Q
GS
Q
GD
V
DS
= 200 V
T
J
= 25°C
I
D
= 1.7 A
Q
T
V
GS
450
400
350
300
250
200
150
100
50
0
2
3
4
5
6
Q
G
, TOTAL GATE CHARGE (nC)
100
Figure 8. Capacitance Variation
V
GS
= 10 V
V
DD
= 200 V
I
D
= 1.7 A
t, TIME (ns)
t
d(off)
10
t
r
t
d(on)
t
f
V
DS
1
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
I
S
, SOURCE CURRENT (A)
10
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
V
GS
≤
30 V
Single Pulse
T
C
= 25°C
1
10 ms
dc
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
ms
100
ms
1 ms
10
T
J
= 150°C
1
T
J
= 25°C
0.1
0.5 0.6 0.7
T
J
= 125°C
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
= −55°C
Figure 11. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDD02N40
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