2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
March 1993
2N7000 2N7002 NDF7000A NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching They can be
used with a minimum of effort in most applications requir-
ing up to 400 mA DC and can deliver pulsed currents up to
2A This product is particularly suited to low voltage low
current applications such as small servo motor controls
power MOSFET gate drivers and other switching applica-
tions
Features
Y
Y
Y
Y
Y
Efficient high density cell design approaching
(3 million in
2
)
Voltage controlled small signal switch
Rugged
High saturation current
Low R
DS
(ON)
TL G 11378 – 2
TL G 11378 –1
TO-92
7000 Series
TO-236 AB
(SOT-23)
7002 Series
TL G 11378 – 3
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
GS
s
1 MX)
Gate-Source Voltage
Drain Current Continuous
Pulsed
P
D
Total Power Dissipation
Derating above 25 C
T
J
T
STG
T
L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes
from Case for 10 Seconds
T
A
e
25 C
200
500
400
32
115
800
200
16
2N7000
2N7002
NDF7000A
60
60
g
40
NDS7002A
Units
V
V
V
400
2000
625
5
280
1500
300
24
b
65 to 150
mA
mA
mW
mW C
C
C
b
55 to 150
300
C
1995 National Semiconductor Corporation
TL G 11378
RRD-B30M115 Printed in U S A
2N7000
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
e
0V I
D
e
10
mA
V
DS
e
48V V
GS
e
0V
T
C
e
125 C
I
GSSF
Gate-Body Leakage Forward
V
GS
e b
15V V
DS
e
0V
60
1
1
b
10
Parameter
Conditions
Min
Typ
Max
Units
V
mA
mA
nA
ON CHARACTERISTICS
V
GS(th)
r
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Drain-Source On-Voltage
V
DS
e
V
GS
I
D
e
1 mA
V
GS
e
10V I
D
e
0 5A
T
C
e
125 C
V
GS
e
10V I
D
e
0 5A
V
GS
e
4 5V I
D
e
75 mA
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
e
4 5V V
DS
e
10V
V
DS
e
10V I
D
e
200 mA
75
100
08
21
12
19
06
0 14
600
320
3
5
9
25
04
V
X
X
V
V
mA
ms
V
DS(ON)
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
11
4
60
25
5
pF
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
off
Turn-On Time
Turn-Off Time
V
DD
e
15V I
D
e
0 5V V
GS
e
10V
R
G
e
25X R
L
e
25X
10
10
ns
ns
BODY-DRAIN DIODE RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
200 mA
200
500
15
mA
mA
V
THERMAL CHARACTERISTICS
R
iJA
R
iJC
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
312 5
40
C W
C W
Pulse Test Pulse Width
s
300
ms
Duty Cycle
s
2 0%
2
2N7002
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
e
0V I
D
e
10
mA
V
DS
e
60V V
GS
e
0V
T
C
e
125 C
I
GSSF
I
GSSR
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
V
GS
e
20V
V
GS
e b
20V
60
1
500
100
b
100
V
mA
mA
nA
nA
ON CHARACTERISTICS
V
GS(th)
r
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
e
V
GS
I
D
e
250
mA
V
GS
e
10V I
D
e
0 5A
T
C
e
125 C
V
GS
e
5V I
D
e
50 mA
T
C
e
125 C
V
DS(ON)
Drain-Source On-Voltage
V
GS
e
10V I
D
e
0 5A
V
GS
e
5V I
D
e
50 mA
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
e
10V V
DS
t
2 V
DS(ON)
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
500
80
1
21
12
2
17
28
06
0 09
2700
320
25
75
13 5
75
13 5
3 75
15
V
X
X
X
X
V
V
mA
ms
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
11
4
50
25
5
pF
pF
pF
SWITCHING CHARACTERISTICS
t
ON
t
OFF
Turn-On Time
Turn-Off Time
V
DD
e
30V I
D
e
200 mA V
GS
e
10V
R
GEN
e
25X R
L
e
150X
20
20
ns
ns
BODY-DRAIN DIODE RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
115 mA
115
800
15
mA
mA
V
THERMAL CHARACTERISTICS
R
iJA
Thermal Resistance Junction to Ambient
625
C W
Pulse Test Pulse Width
s
300
ms
Duty Cycle
s
2 0%
3
NDF7000A
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
e
0V I
D
e
10
mA
V
DS
e
48V V
GS
e
0V
T
C
e
125 C
I
GSSF
Gate-Body Leakage Forward
V
GS
e b
15V
60
1
1
b
10
Parameter
Conditions
Min
Typ
Max
Units
V
mA
mA
nA
ON CHARACTERISTICS
V
GS(th)
r
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Drain-Source On-Voltage
V
DS
e
V
GS
I
D
e
1 mA
V
GS
e
10V I
D
e
0 5A
T
C
e
125 C
V
GS
e
10V I
D
e
500 mA
V
GS
e
4 5V I
D
e
75 mA
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
e
4 5V V
DS
t
2 V
DS(ON)
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
400
100
08
21
12
2
06
0 14
600
320
3
2
35
1
0 225
V
X
X
V
V
mA
ms
V
DS(ON)
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
11
4
60
25
5
pF
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
off
Turn-On Time
Turn-Off Time
V
DD
e
15V I
D
e
500 mA V
GS
e
10V
R
G
e
25X R
L
e
25X
10
10
ns
ns
BODY-DRAIN DIODE RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
400 mA
0 88
400
2000
12
mA
mA
V
THERMAL CHARACTERISTICS
R
iJA
Thermal Resistance Junction to Ambient
200
C W
Pulse Test Pulse Width
s
300
ms
Duty Cycle
s
2 0%
4
NDS7002A
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
e
0V I
D
e
10
mA
V
DS
e
60V V
GS
e
0V
T
C
e
125 C
I
GSSF
I
GSSR
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
V
GS
e
20V
V
GS
e b
20V
60
1
500
100
b
100
V
mA
mA
nA
nA
ON CHARACTERISTICS
V
GS(th)
r
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
e
V
GS
I
D
e
250
mA
V
GS
e
10V I
D
e
0 5A
T
C
e
125 C
V
GS
e
5V I
D
e
50 mA
T
C
e
125 C
V
DS(ON)
Drain-Source On-Voltage
V
GS
e
10V I
D
e
500 mA
V
GS
e
5 0V I
D
e
50 mA
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
e
10V V
DS
t
2 V
DS(ON)
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
500
80
1
21
12
2
17
28
06
0 09
2700
320
25
2
35
3
5
1
0 15
V
X
X
X
X
V
V
mA
ms
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
11
4
50
25
5
pF
pF
pF
SWITCHING CHARACTERISTICS
t
ON
t
OFF
Turn-On Time
Turn-Off Time
V
DD
e
30V I
D
e
200 mA V
GS
e
10V
R
G
e
25X R
L
e
150X
20
20
ns
ns
BODY-DRAIN DIODE RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
400 mA
0 88
280
1500
12
mA
mA
V
THERMAL CHARACTERISTICS
R
iJA
Thermal Resistance Junction to Ambient
417
C W
Pulse Test Pulse Width
s
300
ms
Duty Cycle
s
2 0%
5
