型号
- 型号
- 关键词
Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
厂商名称：Fairchild
厂商官网：http://www.fairchildsemi.com/
下载文档| 型号 | NDS352APL99Z | NDS352APS62Z |
|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 |
| 零件包装代码 | SOT | SOT |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 |
| 制造商包装代码 | SUPERSOT | SUPERSOT |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| Is Samacsys | N | N |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V |
| 最大漏极电流 (ID) | 0.9 A | 0.9 A |
| 最大漏源导通电阻 | 0.3 Ω | 0.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
