型号
- 型号
- 关键词
| 型号 | NDT3055/L99Z | NDT3055/J23Z | NDT3055/D84Z | NDT3055/S62Z | NDT3055 |
|---|---|---|---|---|---|
| 描述 | 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 4 A | 4 A | 4 A | 4 A | 4 A |
| 最大漏源导通电阻 | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G4 | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 3 | 4 | 4 | 4 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 1.1 W | 1.1 W | 1.1 W | 1.1 W | 1.1 W |
| 最大脉冲漏极电流 (IDM) | 25 A | 25 A | 25 A | 25 A | 25 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 125 ns | 125 ns | 125 ns | 125 ns | 125 ns |
| 最大开启时间（吨） | 75 ns | 75 ns | 75 ns | 75 ns | 75 ns |
| JEDEC-95代码 | TO-261 | - | TO-261 | TO-261 | TO-261 |
| Base Number Matches | 1 | 1 | 1 | - | - |