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NE592D14

1 CHANNEL, VIDEO AMPLIFIER, PDSO14, SOIC-14

器件类别:模拟混合信号IC    消费电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
SOP,
针数
14
Reach Compliance Code
unknown
Is Samacsys
N
标称带宽
90000 kHz
商用集成电路类型
VIDEO AMPLIFIER
JESD-30 代码
R-PDSO-G14
JESD-609代码
e0
长度
8.65 mm
信道数量
1
功能数量
1
端子数量
14
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
认证状态
COMMERCIAL
座面最大高度
1.75 mm
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
6 V
表面贴装
YES
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
3.9 mm
Base Number Matches
1
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NE592
Video Amplifier
The NE592 is a monolithic, two-stage, differential output,
wideband video amplifier. It offers fixed gains of 100 and 400
without external components and adjustable gains from 400 to 0 with
one external resistor. The input stage has been designed so that with
the addition of a few external reactive elements between the gain
select terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
Features
http://onsemi.com
MARKING
DIAGRAMS
8
1
SOIC−8
D SUFFIX
CASE 751
1
NE592
ALYW
G
120 MHz Unity Gain Bandwidth
Adjustable Gains from 0 to 400
Adjustable Pass Band
No Frequency Compensation Required
Wave Shaping with Minimal External Components
MIL-STD Processing Available
Pb−Free Packages are Available
8
1
PDIP−8
N SUFFIX
CASE 626
1
NE592N8
AWL
YYWWG
Applications
Floppy Disk Head Amplifier
Video Amplifier
Pulse Amplifier in Communications
Magnetic Memory
Video Recorder Systems
+V
R1
R2
R8
R10
R9
Q6
Q5
Q4
Q3
R11
OUTPUT 1
14
1
SOIC−14
D SUFFIX
CASE 751A
1
NE592D14G
AWLYWW
1
14
PDIP−14
N SUFFIX
CASE 646
1
NE592N14
AWLYYWWG
INPUT 1
Q1
G1A
R3
G2A
Q2
INPUT 2
G1B
R5
G2B
R12
OUTPUT 2
A
L, WL
Y, YY
W, WW
G
or G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Q9
Q10
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Q11
R14
-V
Q7A
Q7B
Q8
R7A
R7B
R15
R16
R13
Figure 1. Block Diagram
©
Semiconductor Components Industries, LLC, 2006
October, 2006
Rev. 4
1
Publication Order Number:
NE592/D
NE592
PIN CONNECTIONS
D, N Packages
INPUT 2
NC
G
2B
GAIN SELECT
G
1B
GAIN SELECT
V-
NC
OUTPUT 2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
INPUT 1
NC
G
2A
GAIN SELECT
G
1A
GAIN SELECT
V+
NC
OUTPUT 1
INPUT 2
G
1B
GAIN SELECT
1
2
4
D, N Packages
8
7
6
5
INPUT 1
G
1A
GAIN SELECT
V+
OUTPUT 1
V- 3
OUTPUT 2
(Top View)
(Top View)
MAXIMUM RATINGS
(T
A
= +25°C, unless otherwise noted.)
Rating
Supply Voltage
Differential Input Voltage
Common-Mode Input Voltage
Output Current
Operating Ambient Temperature Range
Operating Junction Temperature
Storage Temperature Range
Maximum Power Dissipation, T
A
= 25°C (Still Air) (Note 1)
D-14 Package
D-8 Package
N-14 Package
N-8 Package
D-14 Package
D-8 Package
N-14 Package
N-8 Package
Symbol
V
CC
V
IN
V
CM
I
OUT
T
A
T
J
T
STG
P
D MAX
0.98
0.79
1.44J1.17
R
qJA
145
182
100
130
°C/W
Value
"8.0
"5.0
"6.0
10
0 to +70
150
65 to +150
Unit
V
V
V
mA
°C
°C
°C
W
Thermal Resistance, Junction−to−Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Derate above 25°C at the following rates:
D-14 package at 6.9 mW/°C
D-8 package at 5.5 mW/°C
N-14 package at 10 mW/°C
N-8 package at 7.7 mW/°C.
http://onsemi.com
2
NE592
DC ELECTRICAL CHARACTERISTICS
(V
SS
=
"6.0
V, V
CM
= 0, typicals at T
A
= +25°C, min and max at 0°C
v
T
A
v
70°C, unless
Characteristic
Differential Voltage Gain
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Input Resistance
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Input Capacitance
Input Offset Current
Input Bias Current
Input Noise Voltage
Input Voltage Range
Common-Mode Rejection Ratio
Gain 2 (Note 4)
Test Conditions
R
L
= 2.0 kW, V
OUT
= 3.0 V
P-P
Symbol
A
VOL
Min
250
80
10
8.0
"1.0
60
50
PSRR
V
OS
50
Typ
400
100
4.0
30
2.0
0.4
9.0
12
86
60
70
Max
600
120
5.0
6.0
30
40
dB
V
Unit
V/V
otherwise noted. Recommended operating supply voltages V
S
=
"6.0
V.)
T
A
= 25°C
0°C
v
T
A
v
70°C
Gain 2 (Note 4)
T
A
= 25°C
0°C
v
T
A
v
70°C
T
A
= 25°C
0°C
v
T
A
v
70°C
BW 1.0 kHz to 10 MHz
V
CM
"1.0
V, f < 100 kHz, T
A
= 25°C
V
CM
"1.0
V, f < 100 kHz,
0°C
v
T
A
v
70°C
V
CM
"1.0
V, f < 5.0 MHz
DV
S
=
"0.5
V
R
IN
kW
C
IN
I
OS
I
BIAS
V
NOISE
V
IN
CMRR
pF
mA
mA
mV
RMS
V
dB
Supply Voltage Rejection Ratio
Gain 2 (Note 4)
Output Offset Voltage
Gain 1
Gain 2 (Note 4)
Gain 3 (Note 5)
Gain 3 (Note 5)
Output Common-Mode Voltage
Output Voltage Swing Differential
Output Resistance
Power Supply Current
R
L
=
R
R
L
=
R
R
L
=
R,
T
A
= 25°C
R
L
=
R,
0°C
v
T
A
v
70°C
R
L
=
R,
T
A
= 25°C
R
L
= 2.0 kW, T
A
= 25°C
R
L
= 2.0 kW, 0°C
v
T
A
v
70°C
R
L
=
R,
T
A
= 25°C
R
L
=
R,
0°C
v
T
A
v
70°C
2.4
3.0
2.8
0.35
2.9
4.0
20
18
1.5
1.5
0.75
1.0
3.4
24
27
V
CM
V
OUT
R
OUT
I
CC
V
V
W
mA
supply voltages V
S
=
"6.0
V.)
Characteristic
Bandwidth
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Rise Time
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
Propagation Delay
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
2.
3.
4.
5.
AC ELECTRICAL CHARACTERISTICS
(T
A
= +25°C V
SS
=
"6.0
V, V
CM
= 0, unless otherwise noted. Recommended operating
Test Conditions
Symbol
BW
Min
Typ
40
90
10.5
4.5
7.5
6.0
Max
12
10
Unit
MHz
V
OUT
= 1.0 V
P−P
t
R
ns
V
OUT
= 1.0 V
P−P
t
PD
ns
Gain select Pins G
1A
and G
1B
connected together.
Gain select Pins G
2A
and G
2B
connected together.
Applies to 14-pin version only.
All gain select pins open.
http://onsemi.com
3
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
COMMON-MODE REJECTION RATIO
dB
100
OUTPUT VOLTAGE SWING
Vpp
90
80
70
60
50
40
30
20
10
0
10k
100k
1M
10M
100M
GAIN 2
V
S
= +6V
T
A
= 25
o
C
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
V
S
= +6V
T
A
= 25
o
C
R
L
= 1kW
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-0.2
1
5 10
50 100
500 1000
-0.4
-15 -10 -5
0
5
10 15 20 25 30 35
GAIN 2
GAIN 1
V
S
= +6V
T
A
= 25
o
C
R
L
= 1k
FREQUENCY
Hz
FREQUENCY
MHz
TIME
ns
Figure 2. Common−Mode
Rejection Ratio as a Function
of Frequency
Figure 3. Output Voltage Swing
as a Function of Frequency
Figure 4. Pulse Response
28
T
A
= 25
o
C
SUPPLY CURRENT
mA
24
OUTPUT VOLTAGE
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-0.2
GAIN 2
T
A
= 25
o
C
R
L
= 1kW
1.6
1.4
OUTPUT VOLTAGE
V
V
S
= +8V
V
S
= +6V
V
S
= +3V
1.2
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
0
5 10 15 20 25 30 35
TIME
ns
-15 -10 -5
0
5
10 15 20 25 30 35
T
amb
= 0
o
C
T
A
= 25
o
C
T
A
= 70
o
C
GAIN 2
V
S
= +
6V
R
L
= 1kW
20
16
12
8
3
4
5
6
7
8
SUPPLY VOLTAGE
+V
-0.4
-15 -10 -5
TIME
ns
Figure 5. Supply Current as
a Function of Temperature
Figure 6. Pulse Response as
a Function of Supply Voltage
Figure 7. Pulse Response as
a Function of Temperature
SINGLE ENDED VOLTAGE GAIN
dB
1.10
1.08
RELATIVE VOLTAGE GAIN
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
0
10
20
30
40
50
60
70
GAIN 1
GAIN 2
V
S
= +
6V
60
50
40
30
20
10
0
-10
1
5 10
T
A
=
−55
o
C
T
A
= 25
o
C
T
A
= 125
o
C
1.4
GAIN 2
V
S
= +
6V
R
L
= 1kW
1.3
RELATIVE VOLTAGE GAIN
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
50 100
500 1000
3
4
5
6
7
8
FREQUENCY
MHz
SUPPLY VOLTAGE
+V
GAIN 1
GAIN 2
T
amb
= 25
o
C
TEMPERATURE
o
C
Figure 8. Voltage Gain as a
Function of Temperature
Figure 9. Gain vs. Frequency
as a Function of Temperature
Figure 10. Voltage Gain as a
Function of Supply Voltage
http://onsemi.com
4
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参数对比
与NE592D14相近的元器件有:NE592D14R2、NE592D8、NE592D8R2、NE592N14、NE592N8。描述及对比如下:
型号 NE592D14 NE592D14R2 NE592D8 NE592D8R2 NE592N14 NE592N8
描述 1 CHANNEL, VIDEO AMPLIFIER, PDSO14, SOIC-14 1 CHANNEL, VIDEO AMPLIFIER, PDSO14, SOIC-14 1 CHANNEL, VIDEO AMPLIFIER, PDSO8, SOIC-8 1 CHANNEL, VIDEO AMPLIFIER, PDSO8, SOIC-8 1 CHANNEL, VIDEO AMPLIFIER, PDIP14, PLASTIC, DIP-14 1 CHANNEL, VIDEO AMPLIFIER, PDIP8, PLASTIC, DIP-8
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
零件包装代码 SOIC SOIC SOIC SOIC DIP DIP
包装说明 SOP, SOP, SOIC-8 SOIC-8 DIP, PLASTIC, DIP-8
针数 14 14 8 8 14 8
Reach Compliance Code unknown unknown unknown unknown unknown unknown
标称带宽 90000 kHz 90000 kHz 40000 kHz 40000 kHz 90000 kHz 40000 kHz
商用集成电路类型 VIDEO AMPLIFIER VIDEO AMPLIFIER VIDEO AMPLIFIER VIDEO AMPLIFIER VIDEO AMPLIFIER VIDEO AMPLIFIER
JESD-30 代码 R-PDSO-G14 R-PDSO-G14 R-PDSO-G8 R-PDSO-G8 R-PDIP-T14 R-PDIP-T8
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 8.65 mm 8.65 mm 4.9 mm 4.9 mm 18.86 mm 9.78 mm
信道数量 1 1 1 1 1 1
功能数量 1 1 1 1 1 1
端子数量 14 14 8 8 14 8
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE
峰值回流温度(摄氏度) 240 240 240 240 240 NOT SPECIFIED
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
座面最大高度 1.75 mm 1.75 mm 1.75 mm 1.75 mm 4.69 mm 4.45 mm
最大供电电压 (Vsup) 6 V 6 V 6 V 6 V 6 V 6 V
最小供电电压 (Vsup) 6 V 6 V 6 V 6 V 6 V 6 V
表面贴装 YES YES YES YES NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30 30 NOT SPECIFIED
宽度 3.9 mm 3.9 mm 3.9 mm 3.9 mm 7.62 mm 7.62 mm
Is Samacsys N N N N - -
Base Number Matches 1 1 1 1 - -
湿度敏感等级 - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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