型号
- 型号
- 关键词
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3
厂商名称：NEC(日电)
下载文档| 型号 | NE960R200 | NE960R200-A | 2N6532 | NE960R275 |
|---|---|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3 | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3 | isc Silicon NPN Darlington Power Transistor | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN |
| 是否Rohs认证 | 不符合 | 符合 | - | 不符合 |
| 厂商名称 | NEC(日电) | NEC(日电) | - | NEC(日电) |
| 包装说明 | DIE-3 | DIE-3 | - | HERMETIC SEALED, CERAMIC, 75, 2 PIN |
| Reach Compliance Code | compliant | compliant | - | compliant |
| 配置 | SINGLE | SINGLE | - | SINGLE |
| 最小漏源击穿电压 | 9 V | 9 V | - | 9 V |
| 最大漏极电流 (ID) | 0.35 A | 0.35 A | - | 0.35 A |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | - | METAL SEMICONDUCTOR |
| 最高频带 | KU BAND | KU BAND | - | KU BAND |
| JESD-30 代码 | R-XUUC-N3 | R-XUUC-N3 | - | R-CDFM-F2 |
| 元件数量 | 1 | 1 | - | 1 |
| 端子数量 | 3 | 3 | - | 2 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | - | DEPLETION MODE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | - | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | UNCASED CHIP | UNCASED CHIP | - | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 260 | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified |
| 表面贴装 | YES | YES | - | YES |
| 端子形式 | NO LEAD | NO LEAD | - | FLAT |
| 端子位置 | UPPER | UPPER | - | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 10 | - | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | - | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | - | GALLIUM ARSENIDE |