To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (800 mW) amplification
P
O
= 29 dBm TYP. @ V
CE
= 3.6 V, P
in
= 15 dBm, f = 460 MHz
P
O
= 29 dBm TYP. @ V
CE
= 3.6 V, P
in
= 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP., @ V
CE
= 3.6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), V
CBO
(ABSOLUTE MAXIMUM RATINGS) = 20 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG250134
Order Number
NESG250134-AZ
Package
3-pin power minimold
(Pb-Free)
NESG250134-T1
NESG250134-T1-AZ
Note1, 2
Quantity
25 pcs
(Non reel)
1 kpcs/reel
• Magazine case
Supplying Form
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1.
Contains lead in the part except the electrode terminals.
2.
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
9.2
2.8
500
1.9
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10422EJ03V0DS (3rd edition)
Date Published October 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2004
NESG250134
THERMAL RESISTANCE (T
A
= +25°C)
Parameter
Termal Resistance from Junction to
Ambient
Note
Symbol
Rth
j-a
Ratings
65
Unit
°C/W
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
2
RECOMMENDED OPERATING RANGE (T
A
= +25°C)
Parameter
Collector to Emitter Voltage
Collector Current
Input Power
Note
Symbol
V
CE
I
C
P
in
MIN.
−
−
−
TYP.
3.6
400
12
MAX.
4.5
500
17
Unit
V
mA
dBm
Note
Input power under conditions of V
CE
≤
4.5 V, f = 460 MHz
2
Data Sheet PU10422EJ03V0DS
NESG250134
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Maximum Satble Gain
Linner gain (1)
f
T
S
21e
MSG
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 0.5 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 100 mA
−
−
80
−
−
120
1
1
180
µ
A
µ
A
−
V
CE
= 3.6 V, I
C
= 100 mA, f = 460 MHz
V
CE
= 3.6 V, I
C
= 100 mA, f = 460 MHz
V
CE
= 3.6 V, I
C
= 100 mA, f = 460 MHz
V
CE
= 3.6 V, I
C (set)
= 30 mA (RF OFF),
f = 460 MHz, P
in
= 0 dBm
−
−
−
16
−
10
19
23
19
−
−
−
−
−
−
−
−
−
GHz
dB
dB
dB
Note 2
G
L
Linner gain (2)
G
L
V
CE
= 3.6 V, I
C (set)
= 30 mA (RF OFF),
f = 900 MHz, P
in
= 0 dBm
16
dB
Output Power (1)
Po
V
CE
= 3.6 V, I
C (set)
= 30 mA (RF OFF),
f = 460 MHz, P
in
= 15 dBm
27
−
−
−
29
dBm
Output Power (2)
Po
V
CE
= 3.6 V, I
C (set)
= 30 mA (RF OFF),
f = 900 MHz, P
in
= 20 dBm
29
dBm
Collector Efficiency (1)
η
c
η
c
V
CE
= 3.6 V, I
C (set)
= 30 mA (RF OFF),
f = 460 MHz, P
in
= 15 dBm
60
%
Collector Efficiency (2)
V
CE
= 3.6 V, I
C (set)
= 30 mA (RF OFF),
f = 900 MHz, P
in
= 20 dBm
60
%
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
SN
80 to 180
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PU10422EJ03V0DS
3
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