DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
PACKAGE DIMENSIONS
(in millimeters)
0.4
–0.05
2.8 ± 0.2
1.5
0.65
–0.15
+0.1
external interface circuit protection.
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold
0.95
2.9 ± 0.2
Package having allowable power dissipation of 200 mW.
+0.1
ance of no less than 30 kV, thus making itself most suitable for
2
3
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
Marking
0.3
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
1.1 to 1.4
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW
100 W (t
T
= 10
µ
s 1 pulse)
150
°C
–55
°C
to +150
°C
Fig. 6
PIN CONNECTION
1. NC
2. Anode
3. Cathode
SC-59 (EIAJ)
Document No. D11773EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
0 to 0.1
©
0.16
–0.06
+0.1
0.4
–0.05
FEATURES
0.95
+0.1
1
1996
NNCD3.3E to NNCD12E
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Dynamic
Impedance
Note 2
Zz (Ω)
MAX.
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
Note 1
V
BR
(V)
Type Number
MIN.
NNCD3.3E
NNCD3.6E
NNCD3.9E
NNCD4.3E
NNCD4.7E
NNCD5.1E
NNCD5.6E
NNCD6.2E
NNCD6.8E
NNCD7.5E
NNCD8.2E
NNCD9.1E
NNCD10E
NNCD11E
NNCD12E
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
10.44
11.42
MAX.
3.50
3.80
4.10
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
10.55
11.56
12.60
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Reverse Leakage
I
R
(
µ
A)
Capacitance
C
t
(pF)
TEST
CONDITION
E.S.D Voltage
(kV)
TEST
CONDITION
MAX.
20
10
10
10
10
5
5
2
2
2
2
2
2
2
2
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
MIN.
30
30
30
30
30
30
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
V
R
= 0 V
f = 1 MHz
30
30
30
30
30
30
30
30
30
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
NNCD3.3E to NNCD12E
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
P - Power Dissipation - mW
200
150
100
50
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature - °C
Fig. 2 I
T
- V
BR
CHARACTERISTICS
NNCD7.5E
NNCD8.2E
NNCD6.8E
NNCD9.1E
Fig. 3 I
T
- V
BR
CHARACTERISTICS
100 m
NNCD3.3E
NNCD3.6E
10 m NNCD3.9E
NNCD4.3E
I
T
- On State Current - A
1m
NNCD4.7E
100
µ
10
µ
1
µ
100 n
10 n
1n
NNCD5.1E
100 m
NNCD10E
10 m
I
T
- On State Current - A
1m
100
µ
10
µ
1
µ
100 n
10 n
1n
NNCD11E
NNCD12E
NNCD5.6E
NNCD6.2E
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
V
BR
- Breakdown Voltage - V
V
BR
- Breakdown Voltage - V
3
NNCD3.3E to NNCD12E
Fig. 4 Z
Z
- I
T
CHARACTERISTICS
1 000
TYP.
Z
Z
- Dynamic Impedance -
Ω
100
NNCD5.6E
NNCD3.9E
NNCD4.7E
NNCD5.1E
NNCD10E
10
NNCD7.5E
1
0.1
1
10
100
I
T
- On State Current - mA
Fig. 5 TRANSIENT THERMAL IMPEDANCE
5 000
Z
th
- Transient Thermal Impedance - °C/W
1 000
625 °C/W
100
NNCD [ ] E
10
5
1m
10 m
100 m
1
t - Time - s
10
100
Fig. 6 SURGE REVERSE POWER RATING
1 000
T
A
= 25 °C
Non-repetitive
P
RSM
P
RSM
- Surge Reverse Power - W
t
T
100
NNCD [ ] E
10
1
1
m
10
m
100
m
1m
10 m
100 m
t
T
- Pulse Width - s
4
NNCD3.3E to NNCD12E
Sample Application Circuits
Set
Note
Conecter
Micro
com.
PC
(CD ROM)
Palallel
Interface
Interface Cable
Note
Set
Printer, P.D.C, T.V Game etc
5
