型号
- 型号
- 关键词
Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN
厂商名称：NEC(日电)
下载文档| 型号 | NP15P06SLG-E1-AY | NP15P06SLG-E2-AY |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 包装说明 | LEAD FREE, MP-3ZK, TO-252, 3 PIN | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| Reach Compliance Code | unknown | unknown |
| 雪崩能效等级（Eas） | 19 mJ | 19 mJ |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V |
| 最大漏极电流 (ID) | 15 A | 15 A |
| 最大漏源导通电阻 | 0.095 Ω | 0.095 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e3 | e3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 45 A | 45 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子面层 | PURE TIN | PURE TIN |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
