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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP161N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP161N04TUG-E1-AY
NP161N04TUG-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
PACKAGE
TO-263-7pin (MP-25ZT) typ. 1.5 g
Note
Pb-free (This product does not contain Pb in the external electrode).
FEATURES
•
Super low on-state resistance
R
DS(on)
= 1.35 mΩ TYP. / 1.8 mΩ MAX. (V
GS
= 10 V, I
D
= 80 A)
•
High Current Rating
I
D(DC)
=
±160
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±160
±640
250
1.8
175
−55
to
+175
70
650
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I
AR
E
AR
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
T
ch
= 150°C, V
DD
= 25 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.6
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19411EJ1V0DS00 (1st edition)
Date Published August 2008 NS
Printed in Japan
2008
NP161N04TUG
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 5 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 80 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 20 V, I
D
= 80 A,
V
GS
= 10 V,
R
G
= 0
Ω
MIN.
TYP.
MAX.
1
±100
UNIT
μ
A
nA
V
S
2.0
35
3.0
88
1.35
13500
1200
750
50
40
110
20
4.0
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
1.8
20250
1800
1350
110
100
220
40
345
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 32 V,
V
GS
= 10 V,
I
D
= 160 A
I
F
= 160 A, V
GS
= 0 V
I
F
= 160 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
230
50
75
0.9
60
100
V
F(S-D)
t
rr
Q
rr
1.5
V
ns
nC
Note
Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D19411EJ1V0DS
NP161N04TUG
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
300
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
P
T
- Total Power Dissipation - W
250
200
150
100
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
C
- Case Temperature -
°C
10000
1000
I
D
- Drain Current - A
d
it e
Lim )
V
i
0
=1
I
D(pulse)
R
S
G
(V
)
( on
DS
PW
=1
i
0
0
μ
100
10
1
0.1
s
I
D(DC)
Po
w
DC
er
D
Se
co
nd
ar
y
1
i
0
1
i
m
s
i
m
s
i
is
B
si
pa
t io
ra
ke
do
n
w
Li
m
it e
d
n
Li
m
it e
d
T
C
= 25°C
Single Pulse
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°C/Wi
10
1
R
th(ch-C)
= 0.6°C/Wi
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19411EJ1V0DS
3
