Preliminary
Data Sheet
NP20N10YDF
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0705EJ0100
Rev.1.00
Apr 17, 2012
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
R
DS(on)
= 55 m MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)
= 68 m MAX. (V
GS
= 5 V, I
D
= 10 A)
R
DS(on)
= 74 m MAX. (V
GS
= 4.5 V, I
D
= 10 A)
Low C
iss
: C
iss
= 1000 pF TYP. (V
DS
= 25 V, V
GS
= 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP20N10YDF-E1-AY
*
1
NP20N10YDF-E2-AY
*
1
Note:
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
*1
Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings
(T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
*
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
*
2
Channel Temperature
Storage Temperature
Single Avalanche Current
*
3
Single Avalanche Energy
*
3
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
Ratings
100
20
20
40
61
1.0
175
–55 to +175
16
26
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
2
Channel to Ambient Thermal Resistance
*
R
th(ch-C)
R
th(ch-A)
2.46
150
°C/W
°C/W
Notes:
*1
T
C
= 25°C, P
W
10
s,
Duty Cycle
1%
*2
Mounted on glass epoxy substrate of 40 mm
40 mm
1.6 mmt with 4% copper area (35
m)
*3
T
ch(start)
= 25°C, V
DD
= 50 V, R
G
= 25
,
L = 100
H,
V
GS
= 20 V
0 V
Caution: This product is an electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 k)
700
V.
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
Page 1 of 6
NP20N10YDF
Electrical Characteristics
(T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
*
1
Drain to Source On-state Resistance
*
1
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
—
—
1.5
8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TYP.
—
—
2.0
17
45
50
53
1000
100
50
13
10
40
4
24
4
7
0.92
56
128
MAX.
1
100
2.5
—
55
68
74
1500
150
90
26
25
80
10
36
—
—
1.5
—
—
Unit
A
nA
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 100 V, V
GS
= 0 V
V
GS
=
20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
A
V
DS
= 5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 5 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 0
V
DD
= 80 V
V
GS
= 10 V
I
D
= 20 A
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, V
GS
= 0 V
di/dt = 100 A/s
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
*
1
Reverse Recovery Time
Reverse Recovery Charge
Note:
*1
Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
Wave Form
V
GS
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
D
V
DD
I
AS
V
DS
V
GS
0
V
DS
Wave Form
V
DS
0
t
d(on)
t
on
τ
τ
= 1
μs
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
Page 2 of 6
NP20N10YDF
Typical Characteristics
(T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
dT - Percentage of Rated Power - %
120
P
T
- Total Power Disslpation - W
0
25
50
75
100
125
150
175
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(ON)
Limited
(V
GS
=10 V) I
I
D(Pulse)
= 40 A
PW
=
I
D
- Drain Current - A
10
D(DC)
= 20 A
10
0
μ
s
ms
0 ms
=1
=1
DC
PW
PW
Power Dissipation Limited
1
Secondary Breakdown Limited
0.1
T
C
= 25°C
Single Pulse
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
R
th(t)
- Transient Thermal Resistance - °C/W
R
th(ch-A)
= 150°C/W
100
10
R
th(ch-C)
= 2.46°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm
×
40 mm
×
1.6 mmt
with 4% copper area (35
μm)
1m
10 m
100 m
1
10
100
1000
0.01
100
μ
PW - Pulse Width - s
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
Page 3 of 6
NP20N10YDF
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
35
V
GS
= 10 V
5.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
100
10
T
A
= –55°C
25°C
75°C
125°C
175°C
I
D
- Drain Current - A
25
20
15
10
5
Pulsed
0
0
1
2
3
4
5
I
D
- Drain Curent - A
30
1
0.1
0.01
V
DS
= 10 V
Pulsed
0.001
0
1
2
3
4
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
V
GS(th)
- Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
3
100
T
A
= –55°C
25°C
75°C
125°C
175°C
2
10
1
V
DS
= V
GS
I
D
= 250
μA
0
–100
–50
0
50
100
150
200
V
DS
= 5 V
Pulsed
1
0.1
1
10
100
T
ch
- Channel Temperature - °C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
140
120
100
80
60
40
20
Pulsed
0
0.1
1
10
100
V
GS
= 10 V
5.0 V
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
120
100
80
60
40
20
Pulsed
0
0
5
10
15
20
I
D
= 4 A
10 A
20 A
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
Page 4 of 6
NP20N10YDF
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
140
120
100
80
60
40
20
0
–100
–50
0
50
100
I
D
= 10 A
Pulsed
150
200
V
GS
= 10 V
5.0 V
4.5 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance -pF
1000
C
iss
100
V
GS
= 0 V
f = 1 MHz
10
0.01
0.1
1
10
C
oss
C
rss
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
V
DD
= 80 V
50 V
20 V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
90
80
70
60
50
40
30
20
10
0
0
5
9
V
GS
8
7
6
5
4
3
2
I
D
= 20 A 1
0
20
25
100
t
d(off)
t
d(on)
t
r
10
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
Ω
1
0.1
1
10
t
f
V
DS
10
15
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10
V
GS
= 10 V
1
V
GS
= 0 V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
Pulsed
0.1
0
0.2
0.4
0.6
0.8
1.0
di/dt = 100 A/μs
V
GS
= 0 V
10
1
10
I
F
- Drain Current - A
100
V
F(S-D)
- Source to Drain Voltage - V
R07DS0705EJ0100 Rev.1.00
Apr 17, 2012
Page 5 of 6
V
GS
- Gate to Source Voltage - V
