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NP36N055HHE

Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, MP-3, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：NEC(日电)

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
NEC(日电)
包装说明
TO-251, MP-3, 3 PIN
Reach Compliance Code
compliant
雪崩能效等级（Eas）
108 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
55 V
最大漏极电流 (ID)
36 A
最大漏源导通电阻
0.014 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-251AA
JESD-30 代码
R-PSIP-T3
JESD-609代码
e0
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
144 A
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HHE, NP36N055IHE, NP36N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP36N055HHE
NP36N055IHE
Note
PACKAGE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 14 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 2300 pF TYP.
•
Built-in gate protection diode
NP36N055SHE
Note
Not for new design.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
(TO-251)
55
±20
±36
±144
1.2
120
36 / 33
12 / 108
175
–55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
I
AS
E
AS
T
ch
T
stg
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
Note2
Note2
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.25
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14152EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
NP36N055HHE, NP36N055IHE, NP36N055SHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 55 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 18 A
V
GS
= 10 V, I
D
= 18 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 28 V, I
D
= 18 A
V
GS
= 10 V
R
G
= 1
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
2.0
9
3.0
18
11
2300
370
180
25
16
52
14
4.0
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
14
3500
560
320
54
39
100
35
66
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
V
DD
= 44 V
V
GS
= 10 V
I
D
= 18 A
I
F
= 36 A, V
GS
= 0 V
I
F
= 36 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
44
10
17
1.0
43
64
V
F(S-D)
t
rr
Q
rr
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14152EJ4V0DS
NP36N055HHE, NP36N055IHE, NP36N055SHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
I
D(DC)
DC
1m
s
PW
T
C
- Case Temperature -
˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
E
AS
- Single Avalanche Energy - mJ
108 mJ
100
80
60
40
20 12 mJ
0
25
50
75
100
125
150
175
I
AS
= 33 A
36 A
I
D
- Drain Current - A
100
d
ite V)
Lim10
)
on
=
S(
S
R
D
t V
G
a
(
10
0
=1
µ
s
0
µ
s
10
P
Limowe
ite r D
d is
sip
at
ion
1
T
C
= 25˚C
Single Pulse
1
10
100
0.1
0.1
V
DS
- Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature -
˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t) - Transient Thermal Resistance -
˚C/W
1000
R
th(ch-A)
= 125
˚C/W
100
10
1
R
th(ch-C)
= 1.25
˚C/W
0.1
Single Pulse
T
C
= 25˚C
100
µ
1m
10 m
100 m
1
10
100
1000
0.01
10
µ
PW - Pulse Width - s
Data Sheet D14152EJ4V0DS
3
NP36N055HHE, NP36N055IHE, NP36N055SHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
200
I
D
- Drain Current - A
I
D
- Drain Current - A
10
160
120
80
40
V
GS
= 10 V
1
T
A
=
−55˚C
25˚C
75˚C
150˚C
175˚C
0.1
0.01
1
2
3
4
5
6
0
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
=10V
Pulsed
10
T
A
= 175˚C
75˚C
25˚C
−55˚C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
35
30
25
20
15
10
5
0
0
5
10
15
20
I
D
= 18 A
1
0.1
0.01
0.01
0.1
1
10
100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
µ
A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
35
30
25
20
15
10
5
0
1
10
100
V
GS
= 10 V
Pulsed
1000
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14152EJ4V0DS
NP36N055HHE, NP36N055IHE, NP36N055SHE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
35
30
25
20
V
GS
= 10 V
15
10
5
I
D
= 18 A
0
−50
0
50
100
150
I
SD
- Diode Forward Current - A
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
45
Pulsed
40
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
V
GS
= 10 V
V
GS
= 0 V
1
0.1
0.01
0
T
ch
- Channel Temperature -
˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1.0
0.5
V
SD
- Source to Drain Voltage - V
1.5
Figure15. SWITCHING CHARACTERISTICS
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10000
1000
t
f
100
t
d(off)
t
d(on)
t
r
10
1000
C
oss
100
C
rss
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/µs
V
GS
= 0 V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
V
DS
- Drain to Source Voltage - V
16
14
V
DD
= 44 V
28 V
11 V
12
V
GS
10
8
6
4
V
DS
I
D
= 36 A
2
30
40
50
60
70
80
0
V
GS
- Gate to Source Voltage - V
70
60
50
40
30
20
10
0
0
10
100
10
1
0.1
1.0
10
100
20
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14152EJ4V0DS
5
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参数对比
与NP36N055HHE相近的元器件有：NP36N055ILE-E1-AZ、NP36N055IHE-E2-AZ、NP36N055ILE-E2-AZ、NP36N055IHE-E1-AZ、NP36N055SHE、NP36N055IHE。描述及对比如下：
型号 NP36N055HHE NP36N055ILE-E1-AZ NP36N055IHE-E2-AZ NP36N055ILE-E2-AZ NP36N055IHE-E1-AZ NP36N055SHE NP36N055IHE
描述 Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, MP-3, 3 PIN Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3ZK, 3 PIN Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3Z, 3 PIN
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 TO-251, MP-3, 3 PIN LEAD FREE, TO-252, MP-3Z, 3 PIN LEAD FREE, TO-252, MP-3Z, 3 PIN LEAD FREE, TO-252, MP-3Z, 3 PIN LEAD FREE, TO-252, MP-3Z, 3 PIN TO-252, MP-3ZK, 3 PIN TO-252, MP-3Z, 3 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant unknown
雪崩能效等级（Eas） 108 mJ 108 mJ 108 mJ 108 mJ 108 mJ 108 mJ 108 mJ
外壳连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 55 V 55 V 55 V 55 V 55 V 55 V 55 V
最大漏极电流 (ID) 36 A 36 A 36 A 36 A 36 A 36 A 36 A
最大漏源导通电阻 0.014 Ω 0.018 Ω 0.014 Ω 0.018 Ω 0.014 Ω 0.014 Ω 0.014 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-251AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 代码 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1 1 1
端子数量 3 2 2 2 2 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 144 A 144 A 144 A 144 A 144 A 144 A 144 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO YES YES YES YES YES YES
端子形式 THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
是否Rohs认证 不符合 符合 符合 符合 符合 不符合 -
JESD-609代码 e0 e6 e6 e6 e6 e0 -
峰值回流温度（摄氏度） NOT SPECIFIED 260 260 260 260 NOT SPECIFIED -
端子面层 TIN LEAD TIN BISMUTH TIN BISMUTH TIN BISMUTH TIN BISMUTH TIN LEAD -
处于峰值回流温度下的最长时间 NOT SPECIFIED 10 10 10 10 NOT SPECIFIED -
其他特性 - TAPE AND REEL TAPE AND REEL TAPE AND REEL TAPE AND REEL - -
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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