型号
- 型号
- 关键词
80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN
厂商名称：Renesas(瑞萨电子)
器件标准：
| 型号 | NP80N055DLE-S12-AY | NP80N055KLE-E1-AY | NP80N055KLE-E2-AY | NP80N055ELE-E1-AY |
|---|---|---|---|---|
| 描述 | 80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN | MOSFET N-CH 55V 80A TO-263 | 80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN | 80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 零件包装代码 | TO-262AA | MP-25ZK | D2PAK | D2PAK |
| 包装说明 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 4 | 4 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 100 mJ | 100 mJ | 100 mJ | 100 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (Abs) (ID) | 80 A | 80 A | 80 A | 80 A |
| 最大漏极电流 (ID) | 80 A | 80 A | 80 A | 80 A |
| 最大漏源导通电阻 | 0.015 Ω | 0.015 Ω | 0.015 Ω | 0.015 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262AA | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 120 W | 120 W | 120 W | 120 W |
| 最大脉冲漏极电流 (IDM) | 200 A | 200 A | 200 A | 200 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | YES | YES | YES |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |