型号
- 型号
- 关键词
Power Field-Effect Transistor, 82A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, MP-25, 3 PIN
厂商名称：NEC(日电)
下载文档| 型号 | NP82N06DLD | NP82N06CLD | NP82N06ELD |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 82A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, MP-25, 3 PIN | Power Field-Effect Transistor, 82A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN | Power Field-Effect Transistor, 82A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZJ, 3 PIN |
| 厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) |
| 零件包装代码 | TO-262AA | TO-220AB | D2PAK |
| 包装说明 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | TO-263, MP-25ZJ, 3 PIN |
| 针数 | 3 | 3 | 4 |
| Reach Compliance Code | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 82 A | 82 A | 82 A |
| 最大漏源导通电阻 | 0.012 Ω | 0.012 Ω | 0.012 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262AA | TO-220AB | TO-263AB |
| JESD-30 代码 | R-PSIP-T3 | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLANGE MOUNT | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 210 A | 210 A | 210 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | YES |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |