DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N055CHE,NP84N055DHE,NP84N055EHE,NP84N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
NP84N055CHE
NP84N055DHE
NP84N055EHE
PACKAGE
TO-220AB
TO-262
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 7.3 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
•
Low C
iss
: C
iss
= 4540 pF TYP.
•
Built-in gate protection diode
5
NP84N055KHE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (
V
GS
= 0 V
)
Gate to Source Voltage (
V
DS
= 0 V
)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
55
±20
±84
±336
1.8
200
175
−55
to +175
84 / 56 / 21
70 / 313 / 441
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
(TO-262)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
≤
10
µ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 28 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14099EJ5V0DS00 (5th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
2002
NP84N055CHE,NP84N055DHE,NP84N055EHE,NP84N055KHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 44 V
V
GS
= 10 V
I
D
= 84 A
I
F
= 84 A, V
GS
= 0 V
I
F
= 84 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 55 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 42 A
V
GS
= 10 V, I
D
= 42 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 28 V, I
D
= 42 A
V
GS
= 10 V
R
G
= 1
Ω
2.0
20
3
44
5.8
4540
710
340
37
22
76
22
88
22
31
1.0
49
78
7.3
6810
1070
620
81
54
150
56
130
MIN.
TYP.
MAX.
10
±10
4.0
UNIT
µ
A
µ
A
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14099EJ5V0DS
NP84N055CHE,NP84N055DHE,NP84N055EHE,NP84N055KHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
280
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
240
200
160
120
80
40
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
d
ite V)
Lim10
=
PW
T
C
- Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
450
E
AS
- Single Avalanche Energy - mJ
I
D(pulse)
10
441 mJ
I
D
- Drain Current - A
100
R tV
(a
)
(on
DS GS
I
D(DC)
DC
P
Limowe
ite r D
d iss
ipa
t
1m
0
µ
=1
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
70 mJ
I
AS
= 21 A
56 A
84 A
313 mJ
s
0
µ
s
s
10
ion
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 0.75˚C/W
0.1
0.01
10
µ
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14099EJ5V0DS
3
NP84N055CHE,NP84N055DHE,NP84N055EHE,NP84N055KHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
320
V
GS
= 10 V
240
160
80
0
Pulsed
I
D
- Drain Current - A
100
10
T
A
=
−40˚C
25˚C
75˚C
150˚C
175˚C
1
0.1
I
D
- Drain Current - A
2
3
4
5
6
7
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
10
T
A
= 175˚C
75˚C
25˚C
−40˚C
V
DS
- Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
1
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
10
I
D
= 42 A
0.1
0.01
0.01
0.1
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
µ
A
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
15
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
3.0
V
GS
= 10 V
5
2.0
1.0
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14099EJ5V0DS
NP84N055CHE,NP84N055DHE,NP84N055EHE,NP84N055KHE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
Pulsed
10
8
6
4
2
0
−50
0
50
100
I
D
= 42 A
150
V
GS
= 10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
I
SD
- Diode Forward Current - A
100
V
GS
= 10 V
V
GS
= 0 V
10
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
SD
- Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
f
100
t
d(off)
t
d(on)
t
r
10
10000
C
iss
1000
C
oss
C
rss
100
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
V
DS
- Drain to Source Voltage - V
10
V
GS
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/µs
V
GS
= 0 V
40
100
V
DD
= 44 V
28 V
11 V
8
30
6
20
4
10
10
V
DS
I
D
= 84 A
0
20
40
60
80
100
120
Q
G
- Gate Charge - nC
2
1
0.1
0
1.0
10
100
I
F
- Drain Current - A
0
Data Sheet D14099EJ5V0DS
5
