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NPT1004

Gallium Nitride 28V, 45W RF Power Transistor

厂商名称:MACOM

厂商官网:http://www.macom.com

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NPT1004
Gallium Nitride 28V, 45W RF Power Transistor
Built using the SIGANTIC
®
NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
Optimized for pulsed, WiMAX, W-CDMA, LTE,
and other light thermal load applications from
DC to 4.0GHz
2500MHz performance
45W P
3dB
CW power
13.5 dB small signal gain
• 55% efficiency at P
3dB
100% RF tested
Low cost, surface mount SOIC package
• High reliability gold metallization process
Lead-free and RoHS compliant
Subject to EAR99 Export Control
DC - 4000MHz
45 Watt, 28 Volt
GaN HEMT
Measured in Nitronex Test Fixture
RF Specifications (2-Tone):
V
DS
= 28V, I
DQ
= 400mA, Frequency = 2500MHz, Tone Spacing = 1MHz, T
C
= 25°C,
Symbol
P
3dB
P
1dB
G
SS
h
Parameter
Average Output Power at 3dB Compression
Average Output Power at 1dB Compression
Small Signal Gain
Drain Efficiency at 3dB Gain Compression
Min
35
-
12.5
50
Typ
45
28
13.5
55
Max
-
-
-
-
Units
W
W
dB
%
Typical OFDM Performance (2500-2700MHz):
V
DS
= 28V, I
DQ
= 350mA, P
OUT,AVG
= 37dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probabil-
ity on CCDF. T
C
= 25°C. Measured in Load Pull System (Refer to Table 2 and Figure 1)
Symbol
EVM
G
P
Parameter
Error Vector Magnitude
Power Gain
Drain Efficiency
Typ
2.0
13.0
27
Units
%
dB
%
h
Typical OFDM Performance (3300-3500MHz):
V
DS
= 28V, I
DQ
= 350mA, P
OUT,AVG
= 36.5dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01%
probability on CCDF. T
C
= 25°C. Measured in Load Pull System (Refer to Table 2 and Figure 1)
Symbol
EVM
G
P
Parameter
Error Vector Magnitude
Power Gain
Drain Efficiency
Typ
2.0
10.5
25
Units
%
dB
%
h
NPT1004
Page 1
NDS-010 Rev. 4, April 2013
NPT1004
DC Specifications:
T
C
=25°C
Symbol
Parameter
Drain-Source Breakdown Voltage
(V
GS
= -8V, I
D
= 16mA)
Drain-Source Leakage Current
(V
GS
= -8V, V
DS
= 60V)
Gate Threshold Voltage
(V
DS
= 28V, I
D
= 16mA)
Gate Quiescent Voltage
(V
DS
= 28V, I
D
= 350mA)
On Resistance
(V
GS
= 2V, I
D
= 120mA)
Drain Current
(V
DS
= 7V pulsed, 300ms pulse width,
0.2% duty cycle, V
GS
= 2V)
Min
Typ
Max
Units
Off Characteristics
V
BDS
I
DLK
100
-
-
2
-
10
V
mA
On Characteristics
V
T
V
GSQ
R
ON
I
D
-2.3
-2.0
-
7.5
-1.8
-1.5
0.25
9.5
-1.3
-1.0
0.30
-
V
V
W
A
Absolute Maximum Ratings:
Not simultaneous, T
C
=25°C unless otherwise noted
Symbol
V
DS
V
GS
P
T
q
JC
T
STG
T
J
HBM
MM
MSL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A113)
Max
100
-10 to 3
40
4.3
-65 to 150
200
Units
V
V
W
°C/W
°C
°C
1B (>500V)
M1(>50V)
Moisture Sensitivity Level (per IPC/JEDEC J-STD-020): Rating of 3 at 260 °C Package Peak Temperature
NPT1004
Page 2
NDS-010 Rev. 4, April 2013
NPT1004
Load-Pull Data, Reference Plane at Device Leads
V
DS
=28V, I
DQ
=350mA, T
A
=25°C unless otherwise noted
Table 1:
Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
900
1500
2500
3500
Z
S
(W)
2.0 + j2.7
1.6 - j0.8
2.0 - j3.2
3.2 - j6.5
Z
L
(W)
6.0 + j3.3
4.5 + j0.5
3.5 - j5.0
2.9 - j8.0
P
SAT
(W)
45
45
45
35
G
SS
(dB)
22.5
18.5
14.0
12.0
Drain Efficiency
@ P
SAT
(%)
72
70
65
60
Table 2:
Optimum Source and Load Impedances for WiMAX Gain, Drain Efficiency, Output Power, and
Linearity Performance
Frequency
(MHz)
2500
1
2600
1
2700
1
3300
2
3500
2
3800
2
Z
S
(W)
2.1 - j7.6
2.3 - j7.7
2.3 - j9.0
3.3 - j11.8
3.5 - j13.5
4.5 - j16.2
Z
L
(W)
3.1 - j3.9
3.3 - j4.4
3.4 - j4.7
3.7 - j7.2
3.5 - j10.0
3.7 - j11.2
P
OUT
(W)
5
5
5
6.3
4.5
3.2
Gain (dB)
14.0
13.0
13.0
11.5
10.5
8.0
Drain Efficiency
(%)
27
27
27
30
25
17
Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
Note 2: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
(a) CW Impedances
(b) OFDM Impedances
Figure 1 -
Optimal Impedances for CW and OFDM Performance
NPT1004
Page 3
NDS-010 Rev. 4, April 2013
NPT1004
Load-Pull Data, Reference Plane at Device Leads
V
DS
=28V, I
DQ
=350mA, T
A
=25°C unless otherwise noted.
Figure 2 -
Typical CW Performance,
Frequency = 900 to 3500MHz, I
DQ
=400mA
Figure 3 -
OFDM Performance Tuned for
P
OUT
at 2% EVM in Load-Pull System
Figure 4 -
OFDM Performance Tuned for
P
OUT
at 1.5% EVM in Load-Pull System
Figure 5 -
OFDM Performance Tuned for
P
OUT
at 2% EVM in Load-Pull System
Figure 6 -
Quiescient Gate Voltage (V
GSQ
) Required
to Reach I
DQ
as a Function of Case Temperature
NPT1004
Page 4
Figure 7 -
MTTF of NRF1 devices as a
function of junction temperature
NDS-010 Rev. 4, April 2013
NPT1004
Ordering Information
Part Number
NPT1004DT
NPT1004DR
Order Multiple
97
1500
Description
Tube; NPT1004 in D (PSOP2) Package
Tape and Reel; NPT1004 in D (PSOP2) Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
D Package Dimensions and Pinout
Inches
A
C
Millimeters
Min
4.80
3.81
2.72
1.80
5.84
0.35
1.40
0.00
0.19
0.40
Dim
A
1.
1. NC
Gate
2.
2. Gate
Gate
3. Gate
3. Gate
4. Gate
5.
4. NC
Drain
6.
5. NC
Drain
7.
6. Drain
Drain
8. Drain
7. Drain
9. Source Pad
8. NC
(Bottom)
9. Source Pad
(Bottom)
Min
0.189
0.150
0.107
0.071
0.230
0.0138
0.055
0.000
0.0075
0.016
Max
0.196
0.157
0.123
0.870
0.244
0.0192
0.065
0.004
0.0098
0.035
Max
4.98
3.99
3.12
2.21
6.22
0.49
1.65
0.10
0.25
0.89
B
C
D
E
f
F
G
G1
H
L
m
8
7
6
5
D
D/2
B
E
9
0.50 BSC
1.270 BSC
1
A/2
2
3
4
Chamfer
G
G1
SEATING
PLANE
F
(8X)
f
(6X)
H
m
L
SEATING PLANE
Mounting Footprints
.150
.055
.105
.100
R.016 (4X Typ)
Solder Paste
.020" X .040"
(8X Typ)
.180
.140 .145 .176
Solder Paste
.080" X .120"
(Typ)
.030
PWB Pad
(8X Typ)
Heat Sink
Pedestal
PWB Cutout
Solder Mask
.005" Relief
(Typ)
NPT1004
Page 5
NDS-010 Rev. 4, April 2013
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参数对比
与NPT1004相近的元器件有:NPT1004_15。描述及对比如下:
型号 NPT1004 NPT1004_15
描述 Gallium Nitride 28V, 45W RF Power Transistor 45W RF Power Transistor
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