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NSS30070MR6T1G

Bipolar Transistors - BJT 700mA 30V Low VCEsat

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
零件包装代码
SC-74
包装说明
SMALL OUTLINE, R-PDSO-G6
针数
6
制造商包装代码
318F-05
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
最大集电极电流 (IC)
0.7 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
150
JESD-30 代码
R-PDSO-G6
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
6
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.665 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
NSS30070MR6T1G
30 V, 0.7 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
http://onsemi.com
30 VOLTS
0.7 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
320 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
This Device is Pb−Free and is RoHS Compliant
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 85°C
Thermal Resistance − Junction-to-Ambient
(Note 1)
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 85°C
Thermal Resistance − Junction-to-Ambient
(Note 2)
Operating and Storage Temperature
Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
P
D
R
qJA
P
D
P
D
R
qJA
T
J
, T
stg
Value
30
40
5.0
700
350
342
178
366
665
346
188
−55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
VS2
M
G
1 2
4
6 5
3
SC−74
CASE 318F
STYLE 2
DEVICE MARKING
VS2 MG
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Operating to Steady State.
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSS30070MR6T1G
Package
Shipping
SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 1
Publication Order Number:
NSS30070MR6/D
NSS30070MR6T1G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter Turn−On Voltage
(V
CE
= 3.0 V, I
C
= 100 mA)
(I
C
= 500 mA, I
B
= 50 mA)
(I
C
= 700 mA, I
B
= 70 mA)
(I
C
= 700 mA, I
B
= 70 mA)
(I
C
= 700 mA, V
CE
= 1.0 V)
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(on)
150
0.25
0.4
1.1
1.0
V
V
V
V
V
(I
C
= 100
mA)
(I
C
= 10 mA)
(I
E
= 100
mA)
(V
CB
= 25 V, I
E
= 0 A)
(V
CB
= 25 V, I
E
= 0 A, T
A
= 125°C)
(V
EB
= 5.0 V, I
C
= 0 A)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
40
30
5.0
1.0
10
10
V
V
V
mA
mA
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
0.5
0.2
0.5 A
0.15
0.4
0.3
0.7 A
0.2
0.5 A
0.1
I
C
= 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
0.1
I
B
, BASE CURRENT (A)
10 mA
0.1 A
0.1
0.1 A
0.05
I
C
= 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
0.1
I
B
, BASE CURRENT (A)
10 mA
Figure 1. Collector Saturation Region
1000
V
CE
= 3.0 V
h FE , DC CURRENT GAIN
V
CE(sat)
, V
BE(sat)
SATURATION VOLTAGES
1.0
Figure 2. Collector Saturation Region
V
BE(sat)
150°C
25°C
-40°C
0.1
V
CE(sat)
100
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
1.0
0.01
0.001
0.01
0.1
I
C
/I
B
= 10
1.0
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “SAT” Voltages
http://onsemi.com
2
NSS30070MR6T1G
1.0
V
BE(sat)
V
CE(sat)
, V
BE(sat)
SATURATION VOLTAGES
VCE(sat) , VOLTAGE (V)
0.12
0°C
0.16
T = 85°C
I
C
/I
B
= 10
25°C
0.1
V
CE(sat)
0.08
0.04
I
C
/I
B
= 100
0.01
0.001
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (A)
0
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
1.0
Figure 5. “SAT” Voltages
Figure 6. Collector−Emitter Saturation Voltage
0.6
I
C
/I
B
= 100
0.5
VCE(sat) , VOLTAGE (V)
0.4
0.3
0.2
0.1
0
0.1
I
C
, COLLECTOR CURRENT (A)
1.0
0°C
T = 85°C
25°C
VBE(on) , VOLTAGE (V)
1.0
-40°C
0.75
25°C
0.5
150°C
0.25
V
CE
= 1.0 V
0
0.0001
0.001
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
Figure 8. V
BE(on)
Voltage
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
0.001
0.01
0.1
TIME (sec)
1.0
10
100
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN569)
Z
qJA
(t) = r(t) R
qJA
T
J(pk)
- T
A
= P
(pk)
Z
qJA
(t)
Figure 9. Thermal Response Curve
http://onsemi.com
3
NSS30070MR6T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
6
5
1
2
4
H
E
E
3
b
e
q
0.05 (0.002)
A1
A
L
C
DIM
A
A1
b
c
D
E
e
L
H
E
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.074
0.7
0.028
0.95
0.037
0.95
0.037
1.0
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
NSS30070MR6/D
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