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NSVJ3910SB3T1G

Precision Amplifiers LOW NOISE,RRO,36V ZERO-DRIFT OP AMP

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
包装说明
SMALL OUTLINE, R-PDSO-G3
制造商包装代码
318BA
Reach Compliance Code
compliant
Factory Lead Time
5 weeks
其他特性
LOW NOISE
配置
SINGLE
最大漏极电流 (ID)
0.05 A
FET 技术
JUNCTION
JESD-30 代码
R-PDSO-G3
JESD-609代码
e6
湿度敏感等级
1
元件数量
1
端子数量
3
工作模式
DEPLETION MODE
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
功耗环境最大值
0.4 W
最大功率耗散 (Abs)
0.4 W
参考标准
AEC-Q101
表面贴装
YES
端子面层
Tin/Bismuth (Sn/Bi)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
NSVJ3910SB3
N-Channel JFET
25V,
20 to 40mA, 40mS
Automotive JFET designed for compact and efficient designs and
including high gain performance. AEC-Q101 qualified JFET and PPAP
capable suitable for automotive applications.
www.onsemi.com
Features
High Forward Transfer Admittance
High Breakdown Voltage
Low Input Capacitance
Low Noise Figure
Pb-Free and RoHS compliance
AEC-Q101 qualified and PPAP capable
ELECTRICAL CONNECTION
N-Channel
3
1 : Source
2 : Drain
3 : Gate
1
2
Typical Applications
Low
Noise Amplifier for Automotive AM Radio
3
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C
(Note 1)
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Symbol
VDSX
VGDS
IG
ID
Value
25
25
10
50
Unit
V
V
mA
mA
1
2
CPH3
MARKING
PD
Allowable Power Dissipation
400
mW
Operating Junction and
TJ, Tstg
55
to
150
C
Storage Temperature
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
©
Semiconductor Components Industries, LLC, 2016
April 2016 - Rev. 0
1
Publication Order Number :
NSVJ3910SB3/D
NSVJ3910SB3
ELECTRICAL CHARACTERISTICS
at Ta = 25°C
(Note 2)
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
Conditions
IG =
10A,
VDS = 0V
VGS =
10V,
VDS = 0V
VDS = 5V, ID = 100A
VDS = 5V, VGS = 0V
VDS = 5V, VGS = 0V, f = 1kHz
VDS = 5V, VGS = 0V, f = 1MHz
0.6
20
30
40
6.0
2.3
1.2
Value
min
25
1.0
1.8
40
typ
max
Unit
V
nA
V
mA
mS
pF
pF
VDS = 5V, VGS = 0V f = 100MHz
Noise Figure
NF
2.1
2.8
dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NSVJ3910SB3
www.onsemi.com
3
NSVJ3910SB3
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
*1 : Lot Indication
RECOMMENDED
SOLDERING FOOTPRINT
0.6
1.4
1 : Source
2 : Drain
3 : Gate
0.95
0.95
www.onsemi.com
4
2.4
NSVJ3910SB3
ORDERING INFORMATION
Device
NSVJ3910SB3T1G
Marking
J2
Package
CPH3
Pb-Free)
Shipping
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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5
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