NTB5605P, NTB5605
Power MOSFET
-60 Volt, -18.5 Amp
P-Channel, D
2
PAK
Features
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V
(BR)DSS
-60 V
R
DS(on)
TYP
120 mW @ -5.0 V
P-Channel
D
I
D
MAX
-18.5 A
•
Designed for Low R
DS(on)
•
Withstands High Energy in Avalanche and Commutation Modes
•
Pb-Free Packages are Available
Applications
•
•
•
•
Power Supplies
PWM Motor Control
Converters
Power Management
G
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
A
= 25°C
T
A
= 25°C
Symbol
V
DSS
V
GS
I
D
P
D
I
DM
T
J
,
T
STG
E
AS
Value
-60
$20
-18.5
88
-55
-55 to
175
338
Unit
V
V
A
W
1
A
°C
mJ
2
3
D
2
PAK
CASE 418B
STYLE 2
x
A
Y
WW
G
4
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
t
p
= 10
ms
NTB5605xG
AYWW
Operating Junction and Storage Temperature
Single Pulse Drain-to-Source Avalanche
Energy (V
DD
= 25 V, V
GS
= 5.0 V, I
PK
= 15 A,
L = 3.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
1
Gate
2
Drain
3
Source
T
L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Case (Drain) – Steady State
Symbol
R
qJC
Max
1.7
Unit
°C/W
= P or blank
= Assembly Location
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
Device
NTB5605P
NTB5605PG
NTB5605PT4
NTB5605PT4G
NTB5605T4G
Package
D
2
PAK
D
2
PAK
(Pb-Free)
D
2
PAK
D
2
PAK
(Pb-Free)
D
2
PAK
(Pb-Free)
Shipping
†
50 Units/Rail
50 Units/Rail
800 Tape & Reel
800 Tape & Reel
800 Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in
2
).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 3
Publication Order Number:
NTB5605P/D
NTB5605P, NTB5605
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(Br)DSS
V
(Br)DSS
/T
J
I
DSS
V
GS
= 0 V
V
DS
= -60 V
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
Drain-to-Source On Voltage
V
GS(th)
R
DS(on)
g
FS
V
DS(on)
V
GS
= V
DS
, I
D
= -250
mA
V
GS
= -5.0 V, I
D
= -8.5 A
V
GS
= -5.0 V, I
D
= -17 A
V
DS
= -10 V, I
D
= -8.5 A
V
GS
= -5.0 V, I
D
= -8.5 A
-1.0
-1.5
120
140
12
-1.3
-2.0
140
V
mW
S
V
I
GSS
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= -250
mA
-60
-64
-1.0
-10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
"20
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
S
= -17 A
T
J
= 25°C
T
J
= 125°C
-1.55
-1.4
60
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= -17 A
39
21
0.14
nC
ns
-2.5
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= -5.0 V, V
DD
= -30 V,
I
D
= -17 A, R
G
= 9.1
W
12.5
122
29
75
25
183
58
150
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
GS
Q
GD
V
GS
= -5.0 V, V
DS
= -48 V,
I
D
= -17 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= -25 V
730
211
67
13
4.0
7.0
1190
300
120
22
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
rr
t
a
t
b
Q
RR
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTB5605P, NTB5605
40
-I
D
, DRAIN CURRENT (AMPS)
35
30
25
20
15
10
5
0
0
8
1
3
5
7
9
2
4
6
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
V
GS
= -3.5 V
V
GS
= -3 V
0
0
6
1
2
3
4
5
7
8
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
9
V
GS
= -10 V
V
GS
= -9 V
V
GS
= -8 V
V
GS
= -7 V
T
J
= 25°C
40
-I
D
, DRAIN CURRENT (AMPS)
V
GS
= -6 V
V
GS
= -5.5 V
V
GS
= -5 V
V
GS
= -4.5 V
V
GS
= -4 V
V
DS
= -10 V
T
J
= -55°C
30
T
J
= 25°C
T
J
= 125°C
20
10
Figure 1. On-Region Characteristics
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
5
10
T
J
= -55°C
15
20
25
30
T
J
= 25°C
T
J
= 125°C
V
GS
= -5.0 V
0.25
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.025
0
0
T
J
= 25°C
V
GS
= -5.0 V
V
GS
= -10 V
3
6
9
12
15
18
21
24
-I
D
, DRAIN CURRENT (AMPS)
-I
D
, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Drain Current and
Temperature
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
1
-25
0
25
50
75
100
125
150
5
I
D
= -8.5 A
V
GS
= -5.0 V
-I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
10
10
15
20
25
30
35
40
45
50
55
60
T
J
, JUNCTION TEMPERATURE (°C)
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTB5605P, NTB5605
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10
C
rss
5 -V
GS
0 -V
DS
5
10
15
20
C
oss
8
7
6
5
4
Q
GS
3
2
1
0
0
4
8
12
Q
g
, TOTAL GATE CHARGE (nC)
I
D
= -17 A
T
J
= 25°C
0
16
Q
DS
Q
T
V
GS
V
DS
60
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
45
C
rss
C
iss
30
15
25
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
-I
S
, SOURCE CURRENT (AMPS)
20
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
15
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
10
t
d(on)
V
DD
= -30 V
I
D
= -17 A
V
GS
= -5.0 V
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
-V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
-I
D
, DRAIN CURRENT (AMPS)
V
GS
= -20 V
SINGLE PULSE
T
C
= 25°C
100
E
AS
, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
400
Figure 10. Diode Forward Voltage vs. Current
I
D
= -15 A
350
300
250
200
150
100
50
0
25
50
75
100
125
150
10
dc
10 ms
1 ms
100
ms
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
10
ms
100
1
0.1
0.1
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTB5605P, NTB5605
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
0.001
0.01
t, TIME (s)
0.1
1
10
0.1
0.0001
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
t
p
I
S
0.25 I
S
Figure 14. Diode Reverse Recovery Waveform
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