NTB6410AN, NTP6410AN,
NVB6410AN
N-Channel Power MOSFET
100 V, 76 A, 13 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current R
qJC
Power Dissipation
R
qJC
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
$20
76
54
188
305
−55 to
+175
76
500
W
A
°C
A
Unit
V
V
A
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I
D
MAX
(Note 1)
76 A
V
(BR)DSS
100 V
R
DS(ON)
MAX
13 mW @ 10 V
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 57.7 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
1
mJ
2
T
L
260
°C
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
0.8
32
Unit
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
NTP
6410ANG
AYWW
1
Gate
2
Drain
3
Source
1
Gate
NTB
6410ANG
AYWW
2
Drain
3
Source
6410AN = Specific Device Code
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 2
Publication Order Number:
NTB6410AN/D
NTB6410AN, NTP6410AN, NVB6410AN
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
100
94
1.0
100
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
I
GSS
V
DS
= 0 V, V
GS
=
$20
V
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
2.0
9.0
4.0
V
mV/°C
V
GS
= 10 V, I
D
= 76 A
V
GS
= 10 V, I
D
= 20 A
11
10
40
13
12
mW
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
g
FS
V
DS
= 5 V, I
D
= 20 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
V
GS
= 10 V, V
DS
= 80 V,
I
D
= 76 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
4500
650
250
120
5.2
20
57
5.1
2.4
pF
nC
V
W
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
I
S
= 76 A
T
J
= 25°C
T
J
= 125°C
1.0
0.9
93
V
GS
= 0 V, I
S
= 76 A,
dI
SD
/dt = 100 A/ms
69
24
300
nC
ns
1.3
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 76 A, R
G
= 6.2
W
17
170
120
190
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
rr
t
a
t
b
Q
RR
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB6410AN, NTP6410AN, NVB6410AN
160
T
J
= 25°C
140
I
D
, DRAIN CURRENT (A)
120
100
80
60
40
20
0
0
1
2
3
V
GS
= 4.4 V
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5.4 V
5.0 V
6.0 V
10 V
7.0 V
I
D
, DRAIN CURRENT (A)
6.5 V
140
120
100
80
60
40
20
0
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
160
V
DS
w
10 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
I
D
= 76 A
T
J
= 25°C
Figure 2. Transfer Characteristics
V
GS
= 10 V
0.025
0.020
0.015
0.010
0.005
0.000
10
20
30
40
50
60
70
80
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.035
T
J
= 175°C
0.025
0.015
0.005
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Region versus Drain Current and
Gate Voltage
100000
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.5
V
GS
= 10 V
I
D
= 76 A
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
2
T
J
= 150°C
10000
1.5
T
J
= 125°C
1000
1
0.5
−50
100
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90
10
T
J
, JUNCTION TEMPERTURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drian−to−Source Leakage Current
versus Voltage
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3
NTB6410AN, NTP6410AN, NVB6410AN
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8000
7000
C, CAPACITANCE (pF)
6000
5000
4000
3000
2000
1000
0
0
C
rss
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
T
J
= 25°C
V
GS
= 0 V
Q
T
8
V
DS
6
Q
gs
Q
gd
60
V
GS
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
100
4
40
2
0
0
20
40
60
80
V
DS
= 80 V
I
D
= 76 A
T
J
= 25°C
100
20
100
0
120
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
V
DS
= 80 V
I
D
= 76 A
V
GS
= 10 V
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
80
I
S
, SOURCE CURRENT (A)
70
60
50
40
30
20
10
T
J
= 25°C
V
GS
= 0 V
t
f
t
r
t
d(on)
t
d(off)
100
t, TIME (ns)
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
AVALANCHE ENERGY (mJ)
500
Figure 10. Diode Forward Voltage versus
Current
I
D
= 57.7 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
400
10
1
ms
10
ms
dc
300
200
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
100
0.1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
0
25
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Opeating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTB6410AN, NTP6410AN, NVB6410AN
1
D = 0.5
0.2
R(t) (°C/W)
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
1.0
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTB6410ANG
NTB6410ANT4G
NTP6410ANG
NVB6410ANT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
TO−220
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 / Tape & Reel
50 Units / Rail
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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