NTD4906N
Power MOSFET
Features
30 V, 54 A, Single N−Channel, DPAK/IPAK
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(on)
MAX
5.5 mW @ 10 V
8.0 mW @ 4.5 V
D
I
D
MAX
54 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
)
(Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
) (Note
2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
14
9.9
2.6
10.3
7.3
1.38
54
38
37.5
223
90
−55
to
175
32
6.5
48
W
A
A
°C
A
V/ns
mJ
W
A
W
A
Unit
V
V
A
G
S
4
4
1 2
N−Channel
4
3
1
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2 3
1
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
49
06NG
4
Drain
AYWW
49
06NG
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
L = 0.1 mH, I
L(pk)
= 31 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
A
= Assembly Location
Y
= Year
WW
= Work Week
4906N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 5
1
Publication Order Number:
NTD4906N/D
AYWW
49
06NG
NTD4906N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Tab (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Junction−to−Ambient
−
Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
4.0
4.3
58
109
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
13
21
20
3.7
7.7
19
22
2.3
ns
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
1932
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
642
19
11
3.0
5.9
1.8
24
nC
nC
pF
gFS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 30 A
V
GS
= V
DS
, I
D
= 250
mA
1.0
1.6
4.0
4.6
4.6
6.5
6.5
52
S
8.0
5.5
2.2
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
15
1.0
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
"20
V
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4906N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
ta
tb
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIs/dt= 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.87
0.76
33
17
16
25
nC
ns
1.1
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance (Note 5)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 5)
Gate Inductance (Note 5)
Gate Resistance
5. Assume terminal length of 110 mils.
2.85
0.0164
1.88
4.9
1.0
2.0
nH
W
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3
NTD4906N
TYPICAL PERFORMANCE CURVES
125
I
D
, DRAIN CURRENT (AMPS)
100
4V
I
D
, DRAIN CURRENT (AMPS)
3.8 V
3.6 V
75
50
25
0
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
80
T
J
= 125°C
60
40
T
J
= 25°C
10 V
7V
4.5 V
4.2 V
V
DS
≥
10 V
100
20
0
T
J
=
−55°C
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
Figure 2. Transfer Characteristics
T
J
= 25°C
0.009
0.008
0.007
0.006
0.005
0.004
15
V
GS
= 4.5 V
V
GS
= 10 V
3
4
5
6
7
8
9
10
25
35
45
55
65
75
85
95 105 115 125
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
5
10,000
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4906N
TYPICAL PERFORMANCE CURVES
2500
2000
C
iss
1500
1000
500
0
C
rss
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
12
9
6
Q
GS
3
0
T
J
= 25°C
V
GS
= 0 V
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Q
T
V
GS
Q
GD
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
T
J
= 25°C
5
20
25
15
10
Q
G
, TOTAL GATE CHARGE (nC)
30
C
oss
0
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
V
GS
= 0 V
25
20
15
T
J
= 125°C
10
5
0
T
J
= 25°C
0
0.2
0.4
0.6
0.8
1.0
1000
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
f
t
r
t, TIME (ns)
100
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
50
45
40
35
30
25
20
15
10
5
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 31 A
100
10
ms
10
100
ms
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1 ms
10 ms
dc
1
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
