NTD4959N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
V
(BR)DSS
30 V
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R
DS(on)
MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
I
D
MAX
58 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
) (Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
) (Note 2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
11.5
9.0
2.0
9.0
7.0
1.3
58
45
52
130
45
−55 to
175
43
6.0
91.0
W
A
A
°C
A
V/ns
mJ
W
A
W
Unit
V
V
A
N−Channel
G
S
4
4
4
A
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2 3
1
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
49
59NG
4
Drain
AYWW
49
59NG
4
Drain
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 13.5 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
A
Y
WW
4959N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 2
Publication Order Number:
NTD4959N/D
AYWW
49
59NG
Operating Junction and Storage Temperature
NTD4959N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
2.9
3.5
74
116
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1.0
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
"20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.7
2.5
V
mV/°C
V
GS
= 10 to
11.5 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
7.0
7.0
12
11
9.0
9.0
mW
14
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
gFS
V
DS
= 15 V, I
D
= 15 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
1456
315
200
11
2.5
4.8
5.0
25
13
pF
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
12.3
21.3
15.1
5.3
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTD4959N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.95
0.83
19.5
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
10.7
8.8
9.2
nC
ns
1.2
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.0
22.7
25.3
2.8
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
t
RR
ta
tb
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
2.49
0.0164
1.88
3.46
2.4
nH
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NTD4959NT4G
NTD4959N−1G
NTD4959N−35G
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
IPAK Trimmed Lead
(3.5
"
0.15 mm)
(Pb−Free)
Shipping
†
2500 Tape & Reel
75 Units/Rail
75 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD4959N
TYPICAL PERFORMANCE CURVES
120
110
I
D
, DRAIN CURRENT (AMPS)
100
90
80
70
60
50
40
30
20
10
0
4.5 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
0
1
2
3
4
5
120
I
D
, DRAIN CURRENT (AMPS)
T
J
= 25°C
5V
V
DS
≥
10 V
100
80
60
40
20
0
0
1
2
3
7V
6.5 V
6V
5.5 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
= 30 A
T
J
= 25°C
0.020
T
J
= 25°C
0.015
V
GS
= 4.5 V
0.010
V
GS
= 11.5 V
0.005
0
10
15
20
25
30
35
40
45
50
55
60
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.0
I
D
= 30 A
V
GS
= 10 V
1.5
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1000
T
J
= 125°C
100
1.0
0.5
−50 −25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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NTD4959N
TYPICAL PERFORMANCE CURVES
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
2500
12
11
10
9
8
7
6
5
4
3
2
Q
1
Q
2
I
D
= 30 A
0 V < V
GS
< 11.5 V
T
J
= 25°C
V
DS
= 0 V V
GS
= 0 V
C
iss
T
J
= 25°C
Q
T
C, CAPACITANCE (pF)
2000
C
iss
1500
C
rss
1000
500
0
10
C
rss
5
V
GS
0
V
DS
5
10
15
20
C
oss
25
1
0
0 1 2 3 4 5 6 7 8 9 1011121314151617181920212223242526
Q
G
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (AMPS)
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
d(off)
t
r
10
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
30
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
GS
= 0 V
25
20
15
10
5
0
0.5
T
J
= 25°C
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
120
Figure 10. Diode Forward Voltage vs. Current
I
D
= 15 A
100
80
60
40
20
0
25
100
10
ms
100
ms
10
1
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1 ms
10 ms
dc
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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