型号
- 型号
- 关键词
Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output
厂商名称：NTE
厂商官网：http://www.nteinc.com
下载文档| 型号 | NTE21 | NTE20 |
|---|---|---|
| 描述 | Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output | Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output |
| Reach Compliance Code | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 2 A | 2 A |
| 集电极-发射极最大电压 | 32 V | 32 V |
| 配置 | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 120 | 120 |
| JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 最高工作温度 | 135 °C | 135 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE |
| 极性/信道类型 | PNP | NPN |
| 最大功率耗散 (Abs) | 1 W | 1 W |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz |