NTE2341(NPN) & NTE2342 (PNP)
Silicon Complementary Transistors
Darlington Driver
Description:
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
TO92 type package designed for general purpose, low frequency applications and as relay drivers.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation, P
tot
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
T
A
= +25°C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Maximum Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . 156K/W
Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
x 10mm.
Electrical Characteristics:
(T
J
= +25°C unless otherwise specified)
Parameter
Collector–EmitterBreakdown Voltage
Collector–BaseBreakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Test Conditions
Min
80
100
5
–
–
–
1000
2000
Typ
–
–
–
–
–
–
–
–
Max
–
–
–
500
100
100
–
–
Unit
V
V
V
nA
nA
nA
V
(BR)CEO
I
C
= 50mA, I
B
= 0
V
(BR)CBO
I
C
= 100µA, I
B
= 0
V
(BR)EBO
I
E
= 100µA, I
C
= 0
I
CEO
I
CBO
I
EBO
h
FE
V
CE
= 40V, I
B
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 4V, I
C
= 0
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Symbol
Test Conditions
I
C
= 1A, I
B
= 1mA
V
BE(sat)
f
T
I
C
= 1A, I
B
= 1mA, Note 3
I
C
= 500mA, V
CE
= 5V,
f = 100MHz
Min
–
–
–
–
Typ
–
–
–
200
Max
1.3
1.8
2.2
–
Unit
V
V
V
MHz
V
CE(sat)
I
C
= 500mA, I
B
= 0.5mA
NTE2341
(NPN)
B
C
.135 (3.45) Min
.210
(5.33)
Max
E
Seating Plane
NTE2342
(PNP)
B
C
.500
(12.7)
Min
.021 (.445) Dia Max
E C B
E
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
模拟与混合信号
