NTE245 (NPN) & NTE246 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in general purpose amplifier applications.
Features:
D
High DC Current Gain: h
FE
= 4000 Typ @ I
C
= 5A
D
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector–Emitter Leakage Current
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
I
CER
Emitter Cutoff Current
I
EBO
V
CE
= 40V, I
B
= 0
V
EB
= 80V, R
BE
= 1kΩ
V
EB
= 80V, R
BE
= 1kΩ, T
C
= +150°C
V
BE
= 5V, I
C
= 0
80
–
–
–
–
–
–
–
–
–
–
1.0
1.0
5.0
2.0
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
ON Characteristics
(Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
h
FE
V
CE(sat)
V
BE
V
CE
= 3V, I
C
= 5A
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 50mA
Base–Emitter Voltage
V
CE
= 3V, I
C
= 5A
1000
–
–
–
–
–
–
–
–
2.0
4.0
3.0
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE245
C
B
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
E
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.665
(16.9)
NTE246
.215 (5.45)
C
B
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
E
